FDA20N50-F109

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

500V

Pulsed Drain Current-Max (IDM) :

88A

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

FAST SWITCHING

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

3120pF @ 25V

Package / Case :

TO-3P-3, SC-65-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

230m Ω @ 11A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Through Hole

Factory Lead Time :

4 Weeks

Packaging :

Tube

Transistor Element Material :

SILICON

Turn-Off Delay Time :

100 ns

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

59.5nC @ 10V

Fall Time (Typ) :

105 ns

Vgs (Max) :

±30V

Rise Time :

375ns

Turn On Delay Time :

95 ns

Number of Elements :

1

Power Dissipation :

280W

Mount :

Through Hole

Transistor Application :

SWITCHING

Power Dissipation-Max :

280W Tc

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Radiation Hardening :

No

Weight :

6.401g

Continuous Drain Current (ID) :

22A

Series :

UniFET™