FDA2712
- Mfr.Part #
- FDA2712
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 64A TO3PN
- Stock
- 6,299
- In Stock :
- 6,299
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 64A
- Avalanche Energy Rating (Eas) :
- 245 mJ
- Pulsed Drain Current-Max (IDM) :
- 240A
- Drain-source On Resistance-Max :
- 0.034Ohm
- Terminal Position :
- Single
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Qualification Status :
- COMMERCIAL
- Mounting Type :
- Through Hole
- DS Breakdown Voltage-Min :
- 250V
- Surface Mount :
- No
- Number of Terminations :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 64A Tc
- Series :
- UltraFET™
- Package / Case :
- TO-3P-3, SC-65-3
- Reach Compliance Code :
- Unknown
- FET Type :
- N-Channel
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 129nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 250V
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 10.175pF @ 25V
- JESD-30 Code :
- R-PSFM-T3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 34m Ω @ 40A, 10V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Power Dissipation-Max :
- 357W Tc
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±30V
- Datasheets
- FDA2712

N-Channel Tube 34m Ω @ 40A, 10V ±30V 10.175pF @ 25V 129nC @ 10V 250V TO-3P-3, SC-65-3
FDA2712 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 245 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 10.175pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 64A.Pulsed drain current is maximum rated peak drain current 240A.A normal operation of the DS requires keeping the breakdown voltage above 250V.This transistor requires a drain-source voltage (Vdss) of 250V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
FDA2712 Features
the avalanche energy rating (Eas) is 245 mJ
based on its rated peak drain current 240A.
a 250V drain to source voltage (Vdss)
FDA2712 Applications
There are a lot of Rochester Electronics, LLC
FDA2712 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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