EMH1T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Power Dissipation :

150mW

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Factory Lead Time :

13 Weeks

Mounting Type :

Surface Mount

Pin Count :

6

Collector Emitter Voltage (VCEO) :

300mV

Voltage - Rated DC :

50V

Continuous Collector Current :

100mA

Published :

2011

Resistor - Emitter Base (R2) :

22k Ω

Peak Reflow Temperature (Cel) :

260

Number of Pins :

6

Resistor - Base (R1) :

22k Ω

JESD-609 Code :

e2

Transition Frequency :

250MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

ECCN Code :

EAR99

Number of Elements :

2

Package / Case :

SOT-563, SOT-666

Terminal Form :

Flat

Collector Emitter Breakdown Voltage :

50V

Element Configuration :

Dual

Lead Free :

Lead Free

Min Operating Temperature :

-55°C

Current - Collector Cutoff (Max) :

500nA

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Max Power Dissipation :

150mW

Radiation Hardening :

No

Terminal Finish :

Tin/Copper (Sn/Cu)

Polarity :

NPN

Max Collector Current :

100mA

Packaging :

Tape and Reel (TR)

hFE Min :

56

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 5mA 5V

Time@Peak Reflow Temperature-Max (s) :

10

Current Rating :

30mA

HTS Code :

8541.21.00.75

Max Breakdown Voltage :

50V

Max Operating Temperature :

150°C

Frequency - Transition :

250MHz

Transistor Type :

2 NPN - Pre-Biased (Dual)

Base Part Number :

*MH1

REACH SVHC :

No SVHC