EMH10T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Number of Pins :

6

Power Dissipation :

150mW

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

150mW

Resistor - Emitter Base (R2) :

22k Ω

Package / Case :

SOT-563, SOT-666

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 21

Time@Peak Reflow Temperature-Max (s) :

10

Pin Count :

6

Number of Terminations :

6

Max Operating Temperature :

150°C

Factory Lead Time :

13 Weeks

Min Operating Temperature :

-55°C

Terminal Finish :

Tin/Copper (Sn/Cu)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Resistor - Base (R1) :

22k Ω

Current - Collector Cutoff (Max) :

500nA

Max Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

50V

Base Part Number :

*MH10

Collector Emitter Voltage (VCEO) :

300mV

Continuous Collector Current :

100mA

Frequency - Transition :

250MHz

Transistor Type :

2 NPN - Pre-Biased (Dual)

Mounting Type :

Surface Mount

Element Configuration :

Dual

hFE Min :

80

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

50V

Radiation Hardening :

No

Polarity :

NPN, PNP

Lead Free :

Lead Free

Number of Elements :

2

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 5mA 5V

Packaging :

Tape and Reel (TR)

Transition Frequency :

250MHz

HTS Code :

8541.21.00.75

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

50V

Pbfree Code :

yes

Current Rating :

100mA

Max Output Current :

100mA

JESD-609 Code :

e2

Published :

2000

Operating Supply Voltage :

50V

Mount :

Surface Mount

Terminal Form :

Flat