EMH10T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Packaging :

Tape and Reel (TR)

HTS Code :

8541.21.00.75

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 5mA 5V

Terminal Form :

Flat

Number of Pins :

6

JESD-609 Code :

e2

Pbfree Code :

yes

Mount :

Surface Mount

Element Configuration :

Dual

Polarity :

NPN, PNP

Operating Supply Voltage :

50V

Terminal Finish :

Tin/Copper (Sn/Cu)

Resistor - Emitter Base (R2) :

22k Ω

Max Collector Current :

100mA

Min Operating Temperature :

-55°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2000

hFE Min :

80

Transistor Type :

2 NPN - Pre-Biased (Dual)

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Number of Terminations :

6

Current Rating :

100mA

Frequency - Transition :

250MHz

Time@Peak Reflow Temperature-Max (s) :

10

Collector Emitter Voltage (VCEO) :

300mV

Peak Reflow Temperature (Cel) :

260

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 21

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

50V

Continuous Collector Current :

100mA

Resistor - Base (R1) :

22k Ω

Max Breakdown Voltage :

50V

Factory Lead Time :

13 Weeks

Max Operating Temperature :

150°C

Package / Case :

SOT-563, SOT-666

Voltage - Rated DC :

50V

Mounting Type :

Surface Mount

Number of Elements :

2

Pin Count :

6

Base Part Number :

*MH10

Max Power Dissipation :

150mW

Lead Free :

Lead Free

ECCN Code :

EAR99

Transition Frequency :

250MHz

Current - Collector Cutoff (Max) :

500nA

Max Output Current :

100mA

Power Dissipation :

150mW