EMH10T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Factory Lead Time :

13 Weeks

Max Collector Current :

100mA

Max Power Dissipation :

150mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

500nA

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Polarity :

NPN, PNP

Collector Emitter Breakdown Voltage :

50V

Operating Supply Voltage :

50V

hFE Min :

80

Max Operating Temperature :

150°C

Voltage - Rated DC :

50V

ECCN Code :

EAR99

Base Part Number :

*MH10

Pbfree Code :

yes

Frequency - Transition :

250MHz

Radiation Hardening :

No

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

10

Continuous Collector Current :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 5mA 5V

Number of Terminations :

6

Min Operating Temperature :

-55°C

Transistor Type :

2 NPN - Pre-Biased (Dual)

Collector Emitter Voltage (VCEO) :

300mV

Pin Count :

6

HTS Code :

8541.21.00.75

Transition Frequency :

250MHz

Transistor Application :

SWITCHING

Power Dissipation :

150mW

Number of Pins :

6

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

50V

Mounting Type :

Surface Mount

Terminal Form :

Flat

Published :

2000

Package / Case :

SOT-563, SOT-666

Element Configuration :

Dual

Lead Free :

Lead Free

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 21

Current Rating :

100mA

Peak Reflow Temperature (Cel) :

260

Resistor - Emitter Base (R2) :

22k Ω

Terminal Finish :

Tin/Copper (Sn/Cu)

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Resistor - Base (R1) :

22k Ω

JESD-609 Code :

e2

Max Output Current :

100mA