EMH11T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Resistor - Emitter Base (R2) :

10k Ω

Power Dissipation :

150mW

Max Power Dissipation :

150mW

Polarity :

NPN

JESD-609 Code :

e2

Voltage - Rated DC :

50V

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Pin Count :

6

Published :

2004

Time@Peak Reflow Temperature-Max (s) :

10

Max Operating Temperature :

150°C

Number of Pins :

6

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Max Collector Current :

100mA

Factory Lead Time :

13 Weeks

Min Operating Temperature :

-55°C

Transistor Type :

2 NPN - Pre-Biased (Dual)

Radiation Hardening :

No

Mount :

Surface Mount

Frequency - Transition :

250MHz

Terminal Finish :

TIN COPPER

Lead Free :

Lead Free

Element Configuration :

Dual

Number of Elements :

2

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Continuous Collector Current :

100mA

hFE Min :

30

Max Breakdown Voltage :

50V

Package / Case :

SOT-563, SOT-666

Current - Collector Cutoff (Max) :

500nA

Current Rating :

50mA

REACH SVHC :

No SVHC

Number of Terminations :

6

Resistor - Base (R1) :

10k Ω

Peak Reflow Temperature (Cel) :

260

Transition Frequency :

250MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.21.00.75

Base Part Number :

*MH11

Collector Emitter Breakdown Voltage :

50V

ECCN Code :

EAR99

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

300mV

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Terminal Form :

Flat

Packaging :

Tape and Reel (TR)