EMH11T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Breakdown Voltage :

50V

Max Power Dissipation :

150mW

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Current Rating :

50mA

Time@Peak Reflow Temperature-Max (s) :

10

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

hFE Min :

30

REACH SVHC :

No SVHC

Resistor - Base (R1) :

10k Ω

Factory Lead Time :

13 Weeks

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Pbfree Code :

yes

Polarity :

NPN

Element Configuration :

Dual

Continuous Collector Current :

100mA

Lead Free :

Lead Free

Min Operating Temperature :

-55°C

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Frequency - Transition :

250MHz

Transition Frequency :

250MHz

Max Operating Temperature :

150°C

RoHS Status :

ROHS3 Compliant

Resistor - Emitter Base (R2) :

10k Ω

Transistor Application :

SWITCHING

Voltage - Rated DC :

50V

Pin Count :

6

HTS Code :

8541.21.00.75

JESD-609 Code :

e2

Package / Case :

SOT-563, SOT-666

Terminal Form :

Flat

Max Collector Current :

100mA

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

50V

Base Part Number :

*MH11

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Published :

2004

Terminal Finish :

TIN COPPER

Current - Collector Cutoff (Max) :

500nA

Transistor Type :

2 NPN - Pre-Biased (Dual)

Power Dissipation :

150mW

Mount :

Surface Mount

Collector Emitter Voltage (VCEO) :

300mV

Number of Elements :

2