EMH11T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Package / Case :

SOT-563, SOT-666

Max Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

300mV

Number of Elements :

2

Resistor - Base (R1) :

10k Ω

Transistor Type :

2 NPN - Pre-Biased (Dual)

Mounting Type :

Surface Mount

Base Part Number :

*MH11

Transition Frequency :

250MHz

Terminal Form :

Flat

Current - Collector Cutoff (Max) :

500nA

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

50V

Power Dissipation :

150mW

JESD-609 Code :

e2

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Min Operating Temperature :

-55°C

Continuous Collector Current :

100mA

Number of Terminations :

6

Mount :

Surface Mount

Resistor - Emitter Base (R2) :

10k Ω

Polarity :

NPN

hFE Min :

30

HTS Code :

8541.21.00.75

Published :

2004

Time@Peak Reflow Temperature-Max (s) :

10

Current Rating :

50mA

Number of Pins :

6

Terminal Finish :

TIN COPPER

Element Configuration :

Dual

Pbfree Code :

yes

Frequency - Transition :

250MHz

Max Operating Temperature :

150°C

Packaging :

Tape and Reel (TR)

Max Collector Current :

100mA

REACH SVHC :

No SVHC

Factory Lead Time :

13 Weeks

Max Power Dissipation :

150mW

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Voltage - Rated DC :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Radiation Hardening :

No

Pin Count :

6