DXT2014P5-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency :

120MHz

Number of Elements :

1

Base Part Number :

DXT2014P5

Collector Base Voltage (VCBO) :

180V

Collector Emitter Breakdown Voltage :

140V

Max Collector Current :

4A

Radiation Hardening :

No

Factory Lead Time :

15 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1A 5V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Manufacturer Package Identifier :

POWERDI-5

Package / Case :

PowerDI™ 5

Transistor Type :

PNP

Power Dissipation :

3.2W

Collector Emitter Voltage (VCEO) :

140V

Continuous Collector Current :

-4A

Pbfree Code :

yes

Transition Frequency :

120MHz

Terminal Finish :

Matte Tin (Sn)

Max Power Dissipation :

3.2W

Weight :

95.991485mg

JESD-609 Code :

e3

Published :

2016

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

360mV @ 300mA, 3A

Time@Peak Reflow Temperature-Max (s) :

40

REACH SVHC :

No SVHC

Max Breakdown Voltage :

140V

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Collector Emitter Saturation Voltage :

-360mV

Current - Collector Cutoff (Max) :

20nA ICBO

Polarity/Channel Type :

PNP

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Emitter Base Voltage (VEBO) :

-7V

JEDEC-95 Code :

TO-252

Mounting Type :

Surface Mount

Gain Bandwidth Product :

120MHz

Element Configuration :

Single

Case Connection :

COLLECTOR

Pin Count :

4

ECCN Code :

EAR99

Terminal Position :

Dual

Terminal Form :

Flat