DXT2014P5-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Terminations :

3

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

140V

Current - Collector Cutoff (Max) :

20nA ICBO

Max Power Dissipation :

3.2W

Terminal Position :

Dual

Terminal Form :

Flat

Transistor Element Material :

SILICON

Number of Elements :

1

Weight :

95.991485mg

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1A 5V

Collector Emitter Saturation Voltage :

-360mV

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

-7V

Case Connection :

COLLECTOR

Published :

2016

Polarity/Channel Type :

PNP

Element Configuration :

Single

Mount :

Surface Mount

Number of Pins :

3

Factory Lead Time :

15 Weeks

Max Breakdown Voltage :

140V

Vce Saturation (Max) @ Ib, Ic :

360mV @ 300mA, 3A

Peak Reflow Temperature (Cel) :

260

Max Collector Current :

4A

Power Dissipation :

3.2W

Pin Count :

4

Package / Case :

PowerDI™ 5

Transistor Type :

PNP

Gain Bandwidth Product :

120MHz

Transition Frequency :

120MHz

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Manufacturer Package Identifier :

POWERDI-5

Collector Emitter Breakdown Voltage :

140V

Base Part Number :

DXT2014P5

Collector Base Voltage (VCBO) :

180V

Frequency :

120MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-252

Time@Peak Reflow Temperature-Max (s) :

40

Continuous Collector Current :

-4A