DXT2010P5-13
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- Mfr.Part #
- DXT2010P5-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- PowerDI™ 5
- Datasheet
- Download
- Description
- TRANS NPN 60V 6A POWERDI5
- Stock
- 10,399
- In Stock ：
- 10,399
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 150V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Continuous Collector Current :
- 6A
- Max Power Dissipation :
- 3.2W
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Published :
- 2012
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 4.05mm
- Collector Emitter Voltage (VCEO) :
- 60V
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Base Part Number :
- DXT2010P5
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 60V
- Max Breakdown Voltage :
- 60V
- Gain Bandwidth Product :
- 130MHz
- Case Connection :
- COLLECTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Matte Tin (Sn)
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 260mV @ 300mA, 6A
- Height :
- 1.15mm
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Max Collector Current :
- 6A
- Polarity/Channel Type :
- NPN
- REACH SVHC :
- No SVHC
- Width :
- 5.45mm
- Emitter Base Voltage (VEBO) :
- 7V
- Collector Emitter Saturation Voltage :
- 260mV
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Factory Lead Time :
- 15 Weeks
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 3.2W
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Terminal Form :
- Flat
- Transition Frequency :
- 130MHz
- Manufacturer Package Identifier :
- POWERDI-5
- Mounting Type :
- Surface Mount
- Frequency :
- 130MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- Package / Case :
- PowerDI™ 5
- Weight :
- 95.991485mg
- Pin Count :
- 4
- JEDEC-95 Code :
- TO-252
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Datasheets
- DXT2010P5-13
DXT2010P5-13 Documents
NPN -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN PowerDI™ 5 Tape & Reel (TR) Surface Mount
DXT2010P5-13 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 2A 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 260mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 260mV @ 300mA, 6A.Single BJT transistor is recommended to keep the continuous collector voltage at 6A in order to achieve high efficiency.The emitter base voltage can be kept at 7V for high efficiency.The part has a transition frequency of 130MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 6A volts at Single BJT transistors maximum.
DXT2010P5-13 Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of 260mV
the vce saturation(Max) is 260mV @ 300mA, 6A
the emitter base voltage is kept at 7V
a transition frequency of 130MHz
DXT2010P5-13 Applications
There are a lot of Diodes Incorporated
DXT2010P5-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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