DXT2010P5-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Pins :

3

REACH SVHC :

No SVHC

Vce Saturation (Max) @ Ib, Ic :

260mV @ 300mA, 6A

Package / Case :

PowerDI™ 5

Current - Collector Cutoff (Max) :

20nA ICBO

Frequency :

130MHz

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Number of Elements :

1

Lead Free :

Lead Free

Collector Emitter Saturation Voltage :

260mV

Published :

2012

Max Breakdown Voltage :

60V

Terminal Position :

Dual

Mounting Type :

Surface Mount

Gain Bandwidth Product :

130MHz

Packaging :

Tape and Reel (TR)

Collector Base Voltage (VCBO) :

150V

Manufacturer Package Identifier :

POWERDI-5

Max Collector Current :

6A

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

15 Weeks

Power Dissipation :

3.2W

Length :

4.05mm

Transistor Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 2A 1V

Case Connection :

COLLECTOR

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

60V

Pin Count :

4

Height :

1.15mm

Base Part Number :

DXT2010P5

Terminal Form :

Flat

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Polarity/Channel Type :

NPN

Number of Terminations :

3

Weight :

95.991485mg

Max Power Dissipation :

3.2W

Emitter Base Voltage (VEBO) :

7V

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

Mount :

Surface Mount

JESD-609 Code :

e3

Continuous Collector Current :

6A

Width :

5.45mm

Collector Emitter Breakdown Voltage :

60V

Transition Frequency :

130MHz

JEDEC-95 Code :

TO-252