DXT2011P5-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Length :

4.05mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 2A 2V

Pbfree Code :

yes

Continuous Collector Current :

6A

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

100V

Max Breakdown Voltage :

100V

JESD-609 Code :

e3

Max Collector Current :

6A

Pin Count :

4

Height :

1.15mm

Width :

5.45mm

Mounting Type :

Surface Mount

Emitter Base Voltage (VEBO) :

7V

Gain Bandwidth Product :

130MHz

Qualification Status :

Not Qualified

Collector Base Voltage (VCBO) :

200V

Weight :

95.991485mg

ECCN Code :

EAR99

Terminal Form :

Flat

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

220mV @ 500mA, 5A

Current - Collector Cutoff (Max) :

20nA ICBO

Collector Emitter Saturation Voltage :

220mV

Manufacturer Package Identifier :

POWERDI-5

Package / Case :

PowerDI™ 5

Base Part Number :

DXT2011P5

Transistor Type :

NPN

Max Power Dissipation :

3.2W

Mount :

Surface Mount

Factory Lead Time :

15 Weeks

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-252

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Transition Frequency :

130MHz

Power Dissipation :

3.2W

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2010

Collector Emitter Breakdown Voltage :

100V

Frequency :

130MHz

Number of Pins :

3

Terminal Finish :

Matte Tin (Sn)

Polarity/Channel Type :

NPN

Number of Terminations :

3

Terminal Position :

Dual