DXT2011P5-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Max Breakdown Voltage :

100V

Max Power Dissipation :

3.2W

Terminal Finish :

Matte Tin (Sn)

Height :

1.15mm

Operating Temperature :

-55°C~150°C TJ

Continuous Collector Current :

6A

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 2A 2V

Qualification Status :

Not Qualified

Package / Case :

PowerDI™ 5

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

3

Length :

4.05mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

95.991485mg

Transistor Element Material :

SILICON

Number of Pins :

3

REACH SVHC :

No SVHC

Polarity/Channel Type :

NPN

Gain Bandwidth Product :

130MHz

Collector Base Voltage (VCBO) :

200V

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

7V

Current - Collector Cutoff (Max) :

20nA ICBO

Published :

2010

Power Dissipation :

3.2W

Number of Elements :

1

Pin Count :

4

JEDEC-95 Code :

TO-252

Frequency :

130MHz

Mounting Type :

Surface Mount

Width :

5.45mm

ECCN Code :

EAR99

Base Part Number :

DXT2011P5

Transition Frequency :

130MHz

Packaging :

Tape and Reel (TR)

Collector Emitter Saturation Voltage :

220mV

Manufacturer Package Identifier :

POWERDI-5

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

220mV @ 500mA, 5A

Transistor Type :

NPN

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

100V

Max Collector Current :

6A

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Transistor Application :

SWITCHING

Terminal Form :

Flat

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

100V

Factory Lead Time :

15 Weeks

Terminal Position :

Dual