DXT2012P5-13
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- Mfr.Part #
- DXT2012P5-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- PowerDI™ 5
- Datasheet
- Download
- Description
- TRANS PNP 60V 5.5A POWERDI5
- Stock
- 51,826
- In Stock ：
- 51,826
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Matte Tin (Sn)
- Pbfree Code :
- yes
- Base Part Number :
- DXT2012P5
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- Max Breakdown Voltage :
- 60V
- ECCN Code :
- EAR99
- Transistor Type :
- PNP
- Manufacturer Package Identifier :
- POWERDI-5
- Collector Emitter Saturation Voltage :
- -250mV
- Gain Bandwidth Product :
- 120MHz
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 5.5A
- Frequency :
- 120MHz
- Continuous Collector Current :
- -5.5A
- Terminal Position :
- Dual
- Weight :
- 95.991485mg
- Transition Frequency :
- 120MHz
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- -7V
- Number of Pins :
- 5
- Factory Lead Time :
- 15 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2012
- Collector Base Voltage (VCBO) :
- 100V
- Polarity/Channel Type :
- PNP
- Package / Case :
- PowerDI™ 5
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 3.2W
- Pin Count :
- 4
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PDSO-F3
- Terminal Form :
- Flat
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 500mA, 5A
- Element Configuration :
- Single
- Max Power Dissipation :
- 3.2W
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Collector Emitter Voltage (VCEO) :
- 60V
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 60V
- Datasheets
- DXT2012P5-13
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP PowerDI™ 5 Tape & Reel (TR) Surface Mount
DXT2012P5-13 Overview
In this device, the DC current gain is 100 @ 2A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 500mA, 5A.A -5.5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 120MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 5.5A volts at Single BJT transistors maximum.
DXT2012P5-13 Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 500mA, 5A
the emitter base voltage is kept at -7V
a transition frequency of 120MHz
DXT2012P5-13 Applications
There are a lot of Diodes Incorporated
DXT2012P5-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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