DXT2013P5-13
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- Mfr.Part #
- DXT2013P5-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- PowerDI™ 5
- Datasheet
- Download
- Description
- TRANS PNP 100V 5A POWERDI5
- Stock
- 16,738
- In Stock ：
- 16,738
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- DXT2013P5
- Terminal Finish :
- Matte Tin (Sn)
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 100V
- Collector Emitter Voltage (VCEO) :
- 100V
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Transition Frequency :
- 125MHz
- Power Dissipation :
- 3.2W
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- -7V
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- -340mV
- Package / Case :
- PowerDI™ 5
- Published :
- 2012
- Factory Lead Time :
- 15 Weeks
- Max Power Dissipation :
- 3.2W
- Terminal Position :
- Dual
- Pin Count :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Collector Current :
- -5A
- Collector Base Voltage (VCBO) :
- 140V
- Collector Emitter Breakdown Voltage :
- 100V
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Case Connection :
- COLLECTOR
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Weight :
- 95.991485mg
- Vce Saturation (Max) @ Ib, Ic :
- 340mV @ 400mA, 4A
- Max Collector Current :
- 5A
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- PNP
- Number of Elements :
- 1
- Frequency :
- 125MHz
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 125MHz
- Terminal Form :
- Flat
- Number of Pins :
- 5
- JESD-30 Code :
- R-PDSO-F3
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- DXT2013P5-13
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP PowerDI™ 5 Tape & Reel (TR) Surface Mount
DXT2013P5-13 Overview
In this device, the DC current gain is 100 @ 1A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -340mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 340mV @ 400mA, 4A.A -5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
DXT2013P5-13 Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -340mV
the vce saturation(Max) is 340mV @ 400mA, 4A
the emitter base voltage is kept at -7V
a transition frequency of 125MHz
DXT2013P5-13 Applications
There are a lot of Diodes Incorporated
DXT2013P5-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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