DXT2013P5-13
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- Mfr.Part #
- DXT2013P5-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- PowerDI™ 5
- Datasheet
- Download
- Description
- TRANS PNP 100V 5A POWERDI5
- Stock
- 16,738
- In Stock ：
- 16,738
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Terminal Form :
- Flat
- Mount :
- Surface Mount
- Collector Emitter Saturation Voltage :
- -340mV
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PDSO-F3
- Vce Saturation (Max) @ Ib, Ic :
- 340mV @ 400mA, 4A
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Number of Elements :
- 1
- Factory Lead Time :
- 15 Weeks
- Package / Case :
- PowerDI™ 5
- Transition Frequency :
- 125MHz
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 3.2W
- Pin Count :
- 4
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 3.2W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Base Part Number :
- DXT2013P5
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- -7V
- Transistor Element Material :
- SILICON
- Published :
- 2012
- Gain Bandwidth Product :
- 125MHz
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Frequency :
- 125MHz
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Continuous Collector Current :
- -5A
- Max Collector Current :
- 5A
- Terminal Finish :
- Matte Tin (Sn)
- Weight :
- 95.991485mg
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 100V
- Operating Temperature :
- -55°C~150°C TJ
- Max Breakdown Voltage :
- 100V
- Collector Base Voltage (VCBO) :
- 140V
- Number of Pins :
- 5
- Pbfree Code :
- yes
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 100V
- Datasheets
- DXT2013P5-13
DXT2013P5-13 Documents
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP PowerDI™ 5 Tape & Reel (TR) Surface Mount
DXT2013P5-13 Overview
In this device, the DC current gain is 100 @ 1A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -340mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 340mV @ 400mA, 4A.A -5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
DXT2013P5-13 Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -340mV
the vce saturation(Max) is 340mV @ 400mA, 4A
the emitter base voltage is kept at -7V
a transition frequency of 125MHz
DXT2013P5-13 Applications
There are a lot of Diodes Incorporated
DXT2013P5-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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