DTC124XCAT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

HTS Code :

8541.21.00.75

Additional Feature :

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 2.136

JESD-30 Code :

R-PDSO-G3

Resistor - Emitter Base (R2) :

47 k Ω

Max Collector Current :

100mA

Transition Frequency :

250MHz

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Type :

NPN - Pre-Biased

Terminal Position :

Dual

Mount :

Surface Mount

Number of Terminations :

3

Polarity/Channel Type :

NPN

Frequency - Transition :

250MHz

Collector Emitter Voltage (VCEO) :

300mV

Operating Temperature (Max) :

150°C

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Reach Compliance Code :

not_compliant

Factory Lead Time :

13 Weeks

Max Power Dissipation :

200mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Configuration :

SINGLE WITH BUILT-IN RESISTOR

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

500nA

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Pin Count :

3

Terminal Form :

Gull wing

Resistor - Base (R1) :

22 k Ω

Collector Emitter Breakdown Voltage :

50V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Elements :

1

Power - Max :

200mW

VCEsat-Max :

0.3 V

Packaging :

Tape and Reel (TR)

Published :

2016