DTC123ECAT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Power - Max :

200mW

Transition Frequency :

250MHz

Additional Feature :

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1

Pin Count :

3

Transistor Type :

NPN - Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 20mA 5V

Resistor - Emitter Base (R2) :

2.2 k Ω

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Mounting Type :

Surface Mount

Operating Temperature (Max) :

150°C

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Qualification Status :

Not Qualified

JESD-30 Code :

R-PDSO-G3

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Element Material :

SILICON

VCEsat-Max :

0.3 V

Current - Collector Cutoff (Max) :

500nA

Max Power Dissipation :

200mW

Collector Emitter Voltage (VCEO) :

300mV

Factory Lead Time :

13 Weeks

Polarity/Channel Type :

NPN

Published :

2006

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

50V

HTS Code :

8541.21.00.75

Collector Emitter Breakdown Voltage :

50V

Number of Elements :

1

Reach Compliance Code :

not_compliant

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Max Collector Current :

100mA

ECCN Code :

EAR99

Number of Terminations :

3

Resistor - Base (R1) :

2.2 k Ω

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Frequency - Transition :

250MHz

Terminal Form :

Gull wing