DTB543EMT2L

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

115 @ 100mA 2V

Current - Collector Cutoff (Max) :

500nA

Published :

2013

Terminal Finish :

TIN COPPER

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 100mA

Transistor Application :

SWITCHING

Mount :

Surface Mount

Mounting Type :

Surface Mount

hFE Min :

115

Transistor Type :

PNP - Pre-Biased

Continuous Collector Current :

-500mA

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Collector Emitter Breakdown Voltage :

12V

Pin Count :

3

Lead Free :

Lead Free

ECCN Code :

EAR99

Max Operating Temperature :

150°C

Min Operating Temperature :

-55°C

Terminal Form :

Flat

Transition Frequency :

260MHz

Number of Elements :

1

Max Collector Current :

500mA

Base Part Number :

DTB543

Radiation Hardening :

No

Resistor - Emitter Base (R2) :

4.7 k Ω

Number of Pins :

3

Max Power Dissipation :

150mW

Time@Peak Reflow Temperature-Max (s) :

10

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Frequency - Transition :

260MHz

JESD-609 Code :

e2

Number of Terminations :

3

Package / Case :

SOT-723

Factory Lead Time :

13 Weeks

RoHS Status :

ROHS3 Compliant

Max Frequency :

260MHz

Collector Emitter Voltage (VCEO) :

300mV

Terminal Position :

Dual

Output Voltage :

-60mV

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Polarity :

PNP

Resistor - Base (R1) :

4.7 k Ω