DTA143ECAT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Transistor Element Material :

SILICON

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Transistor Type :

PNP - Pre-Biased

Mount :

Surface Mount

Mounting Type :

Surface Mount

Resistor - Emitter Base (R2) :

4.7 k Ω

Number of Elements :

1

Resistor - Base (R1) :

4.7 k Ω

VCEsat-Max :

0.3 V

Current - Collector Cutoff (Max) :

500nA

Collector Emitter Breakdown Voltage :

50V

Operating Temperature (Max) :

150°C

Terminal Position :

Dual

Power - Max :

200mW

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Collector Emitter Voltage (VCEO) :

300mV

Package / Case :

TO-236-3, SC-59, SOT-23-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

200mW

ECCN Code :

EAR99

HTS Code :

8541.21.00.75

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 10mA 5V

Transition Frequency :

250MHz

Polarity/Channel Type :

PNP

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Published :

2015

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Max Breakdown Voltage :

50V

Reach Compliance Code :

not_compliant

Number of Terminations :

3

Frequency - Transition :

250MHz

JESD-30 Code :

R-PDSO-G3

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

13 Weeks

Terminal Form :

Gull wing

Max Collector Current :

100mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING