DTA125TKAT146

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Mfr.Part #
DTA125TKAT146
Manufacturer
ROHM Semiconductor
Package / Case
TO-236-3
Datasheet
Download
Description
TRANS PREBIAS PNP 0.2W SMT3
Stock
1
In Stock :
1

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single, Pre-Biased
Qualification Status :
Not Qualified
DC Current Gain-Min (hFE) :
100
Additional Feature :
BUILT IN BIAS RESISTOR
ECCN Code :
EAR99
JESD-609 Code :
e1
Transistor Application :
SWITCHING
Packaging :
Cut Tape (CT)
Time@Peak Reflow Temperature-Max (s) :
10
HTS Code :
8541.21.00.75
Mount :
Surface Mount
Terminal Form :
Gull wing
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity/Channel Type :
PNP
Configuration :
SINGLE WITH BUILT-IN RESISTOR
Operating Temperature (Max) :
150°C
Transition Frequency :
250MHz
JESD-30 Code :
R-PDSO-G3
Max Breakdown Voltage :
50V
Pbfree Code :
yes
Collector Emitter Voltage (VCEO) :
300mV
Peak Reflow Temperature (Cel) :
260
Number of Elements :
1
Pin Count :
3
Package / Case :
TO-236-3
Published :
2013
Max Power Dissipation :
200mW
RoHS Status :
ROHS3 Compliant
Lead Free :
Lead Free
Collector Emitter Breakdown Voltage :
50V
Number of Terminations :
3
Factory Lead Time :
10 Weeks
Max Collector Current :
100mA
Terminal Finish :
TIN SILVER COPPER
Terminal Position :
Dual
Transistor Element Material :
SILICON
Datasheets
DTA125TKAT146
Introducing Transistors - Bipolar (BJT) - Single, Pre-Biased ROHM Semiconductor DTA125TKAT146 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-236-3, Number of Terminations:3, DTA125TKAT146 pinout, DTA125TKAT146 datasheet PDF, DTA125TKAT146 amp .Beyond Transistors - Bipolar (BJT) - Single, Pre-Biased ROHM Semiconductor DTA125TKAT146 ,we also offer MMUN2211LT1G, MMUN2214LT1G, MMUN2233LT1G, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor DTA125TKAT146


DTA125TKAT146 datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ROHM Semiconductor stock available at

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