DTA123EMT2L

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 5mA 5V

Lead Free :

Lead Free

Max Operating Temperature :

150°C

Max Breakdown Voltage :

50V

hFE Min :

20

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

500nA

Polarity :

PNP

Radiation Hardening :

No

Factory Lead Time :

13 Weeks

Package / Case :

SOT-723

Terminal Position :

Dual

JESD-609 Code :

e2

Pin Count :

3

Mount :

Surface Mount

Resistor - Emitter Base (R2) :

2.2 k Ω

Current Rating :

-100mA

Max Power Dissipation :

150mW

Packaging :

Tape and Reel (TR)

Frequency - Transition :

250MHz

Continuous Collector Current :

-100mA

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Transistor Type :

PNP - Pre-Biased

Transition Frequency :

250MHz

Voltage - Rated DC :

-50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

50V

Base Part Number :

DTA123

Terminal Finish :

Tin/Copper (Sn/Cu)

Number of Pins :

3

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Resistor - Base (R1) :

2.2 k Ω

Power Dissipation :

150mW

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Time@Peak Reflow Temperature-Max (s) :

10

Max Collector Current :

100mA

HTS Code :

8541.21.00.75

Published :

2009

Terminal Form :

Flat

Min Operating Temperature :

-55°C

ECCN Code :

EAR99

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

300mV