DTA115EU3T106

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

82 @ 5mA 5V

Number of Terminations :

3

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Resistor - Base (R1) :

100 k Ω

Resistor - Emitter Base (R2) :

100 k Ω

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Power - Max :

200mW

Package / Case :

SC-70, SOT-323

Number of Elements :

1

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

13 Weeks

Transistor Application :

SWITCHING

Voltage - Collector Emitter Breakdown (Max) :

50V

Frequency - Transition :

250MHz

Transition Frequency :

250MHz

Transistor Type :

PNP - Pre-Biased

Configuration :

SINGLE WITH BUILT-IN RESISTOR

JESD-30 Code :

R-PDSO-G3

Polarity/Channel Type :

PNP

Mounting Type :

Surface Mount

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Terminal Position :

Dual

Current - Collector (Ic) (Max) :

100mA