DTA115ECAT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Resistor - Base (R1) :

100 k Ω

Mount :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

82 @ 5mA 5V

HTS Code :

8541.21.00.75

Terminal Position :

Dual

VCEsat-Max :

0.3 V

Power - Max :

200mW

Additional Feature :

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Transistor Type :

PNP - Pre-Biased

Package / Case :

TO-236-3, SC-59, SOT-23-3

JESD-30 Code :

R-PDSO-G3

Factory Lead Time :

13 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Resistor - Emitter Base (R2) :

100 k Ω

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Polarity/Channel Type :

PNP

Collector Emitter Voltage (VCEO) :

300mV

Number of Elements :

1

Published :

2015

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

250MHz

Collector Emitter Breakdown Voltage :

50V

Max Power Dissipation :

200mW

Max Collector Current :

100mA

Max Breakdown Voltage :

50V

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Reach Compliance Code :

not_compliant

Operating Temperature (Max) :

150°C

Frequency - Transition :

250MHz

Current - Collector Cutoff (Max) :

500nA

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Pin Count :

3

Transistor Element Material :

SILICON