DTA114EEBTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 5mA 5V

Published :

2013

RoHS Status :

ROHS3 Compliant

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Continuous Collector Current :

-100mA

Collector Emitter Voltage (VCEO) :

300mV

hFE Min :

30

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Application :

SWITCHING

JESD-609 Code :

e1

Max Operating Temperature :

150°C

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Max Breakdown Voltage :

50V

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

500nA

ECCN Code :

EAR99

Frequency - Transition :

250MHz

Pin Count :

3

Base Part Number :

DTA114

Pbfree Code :

yes

Max Collector Current :

50mA

Collector Emitter Breakdown Voltage :

50V

Resistor - Emitter Base (R2) :

10 k Ω

Min Operating Temperature :

-55°C

Max Power Dissipation :

150mW

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

10

Terminal Position :

Dual

Number of Pins :

3

Number of Terminations :

3

Transition Frequency :

250MHz

Transistor Type :

PNP - Pre-Biased

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Terminal Form :

Flat

Package / Case :

SC-75, SOT-416

Resistor - Base (R1) :

10 k Ω

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

10 Weeks

Polarity :

PNP

Number of Elements :

1

Lead Free :

Lead Free