DTA015EEBTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Transistor Application :

SWITCHING

Transistor Type :

PNP - Pre-Biased

Continuous Collector Current :

-100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Factory Lead Time :

20 Weeks

Transition Frequency :

250MHz

JESD-30 Code :

R-PDSO-F3

Max Power Dissipation :

150mW

Published :

2013

Collector Emitter Breakdown Voltage :

50V

Resistor - Emitter Base (R2) :

100 k Ω

Max Collector Current :

20mA

Element Configuration :

Single

Frequency - Transition :

250MHz

Collector Emitter Voltage (VCEO) :

150mV

Max Operating Temperature :

150°C

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Max Breakdown Voltage :

50V

ECCN Code :

EAR99

Resistor - Base (R1) :

100 k Ω

Lead Free :

Lead Free

Terminal Position :

Dual

Output Voltage :

-70mV

Weight :

29.993795mg

Transistor Element Material :

SILICON

Mount :

Surface Mount

hFE Min :

80

Package / Case :

SC-89, SOT-490

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Flat

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Mounting Type :

Surface Mount

Polarity :

PNP

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 5mA

Max Frequency :

250MHz