DTA014YUBTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Max Power Dissipation :

200mW

Number of Terminations :

3

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 4.7

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

10

ECCN Code :

EAR99

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

50V

Terminal Form :

Flat

Resistor - Emitter Base (R2) :

47 k Ω

Polarity :

PNP

Published :

2013

Element Configuration :

Single

Transistor Type :

PNP - Pre-Biased

Peak Reflow Temperature (Cel) :

260

Output Voltage :

-70mV

Max Operating Temperature :

150°C

Frequency - Transition :

250MHz

Number of Pins :

85

Continuous Collector Current :

-100mA

JESD-30 Code :

R-PDSO-F3

Collector Emitter Voltage (VCEO) :

150mV

Package / Case :

SC-85

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 5mA

Transition Frequency :

250MHz

Factory Lead Time :

13 Weeks

hFE Min :

80

Max Collector Current :

70mA

Mount :

Surface Mount

Resistor - Base (R1) :

10 k Ω

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Max Breakdown Voltage :

50V

Lead Free :

Lead Free

Max Frequency :

250MHz