DTA014YMT2L

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Output Voltage :

-70mV

Terminal Position :

Dual

Collector Emitter Breakdown Voltage :

50V

Max Power Dissipation :

150mW

Max Breakdown Voltage :

50V

Element Configuration :

Single

Transition Frequency :

250MHz

Number of Elements :

1

Frequency - Transition :

250MHz

Max Frequency :

250MHz

hFE Min :

80

Max Operating Temperature :

150°C

Transistor Application :

SWITCHING

Package / Case :

SOT-723

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 4.7

Packaging :

Tape and Reel (TR)

Continuous Collector Current :

-100mA

Time@Peak Reflow Temperature-Max (s) :

10

Lead Free :

Lead Free

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Resistor - Emitter Base (R2) :

47 k Ω

Terminal Form :

Flat

Published :

2013

Factory Lead Time :

13 Weeks

RoHS Status :

ROHS3 Compliant

Transistor Type :

PNP - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 5mA

Polarity :

PNP

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

150mV

Number of Terminations :

3

Resistor - Base (R1) :

10 k Ω

Mount :

Surface Mount

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

Max Collector Current :

70mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)