DSS5240TQ-7
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- Mfr.Part #
- DSS5240TQ-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 2A SOT23-3
- Stock
- 1,338
- In Stock ：
- 1,338
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 350mV
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 40V
- Polarity/Channel Type :
- PNP
- Max Breakdown Voltage :
- 40V
- Published :
- 2015
- Transistor Application :
- SWITCHING
- Transistor Type :
- PNP
- Power - Max :
- 730mW
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 1A 2V
- Number of Terminations :
- 3
- Additional Feature :
- High Reliability
- Frequency - Transition :
- 100MHz
- Reference Standard :
- AEC-Q101
- Max Power Dissipation :
- 730mW
- JESD-30 Code :
- R-PDSO-G3
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 200mA, 2A
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 100MHz
- Configuration :
- Single
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Factory Lead Time :
- 13 Weeks
- Max Collector Current :
- 2A
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- DSS5240TQ-7
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
DSS5240TQ-7 Overview
In this device, the DC current gain is 210 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 200mA, 2A.100MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.
DSS5240TQ-7 Features
the DC current gain for this device is 210 @ 1A 2V
the vce saturation(Max) is 350mV @ 200mA, 2A
a transition frequency of 100MHz
DSS5240TQ-7 Applications
There are a lot of Diodes Incorporated
DSS5240TQ-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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