DSS5160U-7
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- Mfr.Part #
- DSS5160U-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A SOT323
- Stock
- 1,958
- In Stock ：
- 1,958
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Published :
- 2009
- Current - Collector Cutoff (Max) :
- 100nA
- Gain Bandwidth Product :
- 150MHz
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- 5V
- Pin Count :
- 3
- hFE Min :
- 200
- Max Collector Current :
- 1A
- Transition Frequency :
- 150MHz
- Contact Plating :
- Tin
- Max Power Dissipation :
- 400mW
- Mount :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 60V
- Transistor Type :
- PNP
- Frequency :
- 150MHz
- JESD-609 Code :
- e3
- Package / Case :
- SC-70, SOT-323
- Weight :
- 6.010099mg
- Vce Saturation (Max) @ Ib, Ic :
- 340mV @ 100mA, 1A
- Factory Lead Time :
- 15 Weeks
- Pbfree Code :
- yes
- Width :
- 1.3mm
- Base Part Number :
- DSS5160
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Max Breakdown Voltage :
- 60V
- Collector Emitter Saturation Voltage :
- -340mV
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Termination :
- SMD/SMT
- Collector Base Voltage (VCBO) :
- 80V
- Power Dissipation :
- 400mW
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Length :
- 2.15mm
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 1mm
- Datasheets
- DSS5160U-7
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
DSS5160U-7 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 500mA 5V.The collector emitter saturation voltage is -340mV, which allows for maximum design flexibility.When VCE saturation is 340mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 150MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
DSS5160U-7 Features
the DC current gain for this device is 150 @ 500mA 5V
a collector emitter saturation voltage of -340mV
the vce saturation(Max) is 340mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
DSS5160U-7 Applications
There are a lot of Diodes Incorporated
DSS5160U-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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