DSS5240T-7
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- Mfr.Part #
- DSS5240T-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 2A SOT23-3
- Stock
- 7,752
- In Stock ：
- 7,752
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Termination :
- SMD/SMT
- Collector Base Voltage (VCBO) :
- 40V
- Gain Bandwidth Product :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 1A 2V
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 3
- Contact Plating :
- Tin
- Max Power Dissipation :
- 600mW
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e3
- Width :
- 1.3mm
- Weight :
- 7.994566mg
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 2.9mm
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 100MHz
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Frequency :
- 100MHz
- Number of Pins :
- 3
- Max Collector Current :
- 2A
- Published :
- 2008
- Polarity/Channel Type :
- PNP
- REACH SVHC :
- No SVHC
- hFE Min :
- 300
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 200mA, 2A
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Base Part Number :
- DSS5240
- Max Breakdown Voltage :
- 40V
- Power Dissipation :
- 730mW
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Voltage (VCEO) :
- 40V
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Power - Max :
- 600mW
- Height :
- 1mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Breakdown Voltage :
- 40V
- Collector Emitter Saturation Voltage :
- -350mV
- Terminal Form :
- Gull wing
- Datasheets
- DSS5240T-7
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
DSS5240T-7 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 210 @ 1A 2V DC current gain.As it features a collector emitter saturation voltage of -350mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 2A volts.
DSS5240T-7 Features
the DC current gain for this device is 210 @ 1A 2V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 350mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
DSS5240T-7 Applications
There are a lot of Diodes Incorporated
DSS5240T-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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