DSS5240T-7
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- Mfr.Part #
- DSS5240T-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 2A SOT23-3
- Stock
- 7,752
- In Stock ：
- 7,752
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 40V
- Width :
- 1.3mm
- Max Power Dissipation :
- 600mW
- Mount :
- Surface Mount
- Max Collector Current :
- 2A
- Lead Free :
- Lead Free
- Factory Lead Time :
- 15 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 200mA, 2A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- hFE Min :
- 300
- Emitter Base Voltage (VEBO) :
- 5V
- Weight :
- 7.994566mg
- Height :
- 1mm
- ECCN Code :
- EAR99
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Application :
- SWITCHING
- Published :
- 2008
- Transition Frequency :
- 100MHz
- Operating Temperature :
- -55°C~150°C TJ
- REACH SVHC :
- No SVHC
- Termination :
- SMD/SMT
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 1A 2V
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- -350mV
- Number of Elements :
- 1
- Transistor Type :
- PNP
- Terminal Form :
- Gull wing
- Power Dissipation :
- 730mW
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Base Part Number :
- DSS5240
- Collector Base Voltage (VCBO) :
- 40V
- Number of Pins :
- 3
- Length :
- 2.9mm
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Frequency :
- 100MHz
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 40V
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 100MHz
- Pin Count :
- 3
- Power - Max :
- 600mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 40V
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- DSS5240T-7
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
DSS5240T-7 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 210 @ 1A 2V DC current gain.As it features a collector emitter saturation voltage of -350mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 2A volts.
DSS5240T-7 Features
the DC current gain for this device is 210 @ 1A 2V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 350mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
DSS5240T-7 Applications
There are a lot of Diodes Incorporated
DSS5240T-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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