DSS5160T-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

60V

Base Part Number :

DSS5160

Transition Frequency :

150MHz

Emitter Base Voltage (VEBO) :

-5V

Width :

1.4mm

Gain Bandwidth Product :

150MHz

Transistor Type :

PNP

Package / Case :

TO-236-3, SC-59, SOT-23-3

Element Configuration :

Single

Collector Base Voltage (VCBO) :

-80V

Terminal Position :

Dual

Pbfree Code :

yes

Mount :

Surface Mount

Length :

3mm

Additional Feature :

High Reliability

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Voltage (VCEO) :

60V

Published :

2012

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Max Collector Current :

1A

Polarity/Channel Type :

PNP

Max Power Dissipation :

725mW

Number of Elements :

1

Weight :

7.994566mg

Vce Saturation (Max) @ Ib, Ic :

340mV @ 100mA, 1A

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Terminal Form :

Gull wing

Current - Collector Cutoff (Max) :

100nA ICBO

Terminal Finish :

Matte Tin (Sn)

Lead Free :

Lead Free

Number of Pins :

3

Number of Terminations :

3

REACH SVHC :

No SVHC

Reference Standard :

AEC-Q101

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 500mA 5V

Height :

1.1mm

Max Breakdown Voltage :

60V

Mounting Type :

Surface Mount

Collector Emitter Saturation Voltage :

-340mV

Power - Max :

725mW

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)