DSS5240V-7

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Mfr.Part #
DSS5240V-7
Manufacturer
Diodes Incorporated
Package / Case
SOT-563, SOT-666
Datasheet
Download
Description
TRANS PNP 40V 1.8A SOT563
Stock
55
In Stock :
55

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Radiation Hardening :
No
Base Part Number :
DSS5240
Polarity/Channel Type :
PNP
Collector Emitter Voltage (VCEO) :
40V
DC Current Gain (hFE) (Min) @ Ic, Vce :
300 @ 100mA 5V
Length :
1.6mm
Mount :
Surface Mount
Gain Bandwidth Product :
150MHz
Packaging :
Tape and Reel (TR)
Vce Saturation (Max) @ Ib, Ic :
530mV @ 200mA, 2A
Transistor Element Material :
SILICON
Collector Emitter Saturation Voltage :
-530mV
Pin Count :
6
Width :
1.2mm
Mounting Type :
Surface Mount
Collector Base Voltage (VCBO) :
40V
Terminal Position :
Dual
Collector Emitter Breakdown Voltage :
40V
Time@Peak Reflow Temperature-Max (s) :
40
Current - Collector Cutoff (Max) :
100nA
Max Collector Current :
1.8A
RoHS Status :
ROHS3 Compliant
Published :
2009
ECCN Code :
EAR99
Height :
600μm
Termination :
SMD/SMT
Terminal Form :
Flat
Element Configuration :
Single
Number of Elements :
1
Max Power Dissipation :
600mW
Weight :
3.005049mg
Emitter Base Voltage (VEBO) :
-5V
Operating Temperature :
-55°C~150°C TJ
hFE Min :
300
Frequency :
150MHz
Number of Terminations :
6
Package / Case :
SOT-563, SOT-666
REACH SVHC :
No SVHC
Transistor Type :
PNP
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-609 Code :
e3
Peak Reflow Temperature (Cel) :
260
Transition Frequency :
150MHz
Terminal Finish :
Matte Tin (Sn)
Max Breakdown Voltage :
40V
Number of Pins :
6
Pbfree Code :
yes
Factory Lead Time :
12 Weeks
Power Dissipation :
600mW
Datasheets
DSS5240V-7
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated DSS5240V-7 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:DSS5240, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Terminations:6, Package / Case:SOT-563, SOT-666, Number of Pins:6, DSS5240V-7 pinout, DSS5240V-7 datasheet PDF, DSS5240V-7 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated DSS5240V-7 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DSS5240V-7


PNP -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SOT-563, SOT-666 Tape & Reel (TR) Surface Mount

DSS5240V-7 Overview


In this device, the DC current gain is 300 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -530mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 530mV @ 200mA, 2A.Keeping the emitter base voltage at -5V allows for a high level of efficiency.150MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 1.8A volts.

DSS5240V-7 Features


the DC current gain for this device is 300 @ 100mA 5V
a collector emitter saturation voltage of -530mV
the vce saturation(Max) is 530mV @ 200mA, 2A
the emitter base voltage is kept at -5V
a transition frequency of 150MHz


DSS5240V-7 Applications


There are a lot of Diodes Incorporated
DSS5240V-7 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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