DSS45160FDB-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 500mA 2V / 120 @ 500mA 2V

Vce Saturation (Max) @ Ib, Ic :

240mV @ 50mA, 1A / 550mV @ 50mA, 1A

ECCN Code :

EAR99

JESD-609 Code :

e4

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

NO LEAD

Pbfree Code :

yes

Configuration :

SEPARATE, 2 ELEMENTS

Package / Case :

6-UDFN Exposed Pad

Collector Emitter Voltage (VCEO) :

240mV

Terminal Position :

Dual

Power - Max :

405mW

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency - Transition :

175MHz 65MHz

Published :

2016

Transition Frequency :

175MHz

Current - Collector Cutoff (Max) :

100nA ICBO

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Power Dissipation :

405mW

Max Collector Current :

1A

JESD-30 Code :

S-PDSO-N6

Max Breakdown Voltage :

60V

Transistor Type :

NPN, PNP

Case Connection :

COLLECTOR

Mounting Type :

Surface Mount

Number of Terminations :

6

Collector Emitter Breakdown Voltage :

60V

Number of Elements :

2

Factory Lead Time :

16 Weeks

Polarity :

NPN, PNP

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount