DSS4160TQ-7
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- Mfr.Part #
- DSS4160TQ-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A SOT23-3
- Stock
- 3,000
- In Stock ：
- 3,000
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Frequency - Transition :
- 150MHz
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 5V
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Power - Max :
- 725mW
- Vce Saturation (Max) @ Ib, Ic :
- 280mV @ 100mA, 1A
- Max Collector Current :
- 1A
- Max Power Dissipation :
- 725mW
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- High Reliability
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- Single
- Terminal Position :
- Dual
- Reference Standard :
- AEC-Q101
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transition Frequency :
- 150MHz
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Max Breakdown Voltage :
- 60V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- Matte Tin (Sn)
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 280mV
- Factory Lead Time :
- 13 Weeks
- JESD-30 Code :
- R-PDSO-G3
- Datasheets
- DSS4160TQ-7
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
DSS4160TQ-7 Overview
In this device, the DC current gain is 200 @ 500mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 280mV @ 100mA, 1A.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
DSS4160TQ-7 Features
the DC current gain for this device is 200 @ 500mA 5V
the vce saturation(Max) is 280mV @ 100mA, 1A
a transition frequency of 150MHz
DSS4160TQ-7 Applications
There are a lot of Diodes Incorporated
DSS4160TQ-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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