DSS4160TQ-7
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- Mfr.Part #
- DSS4160TQ-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A SOT23-3
- Stock
- 3,000
- In Stock ：
- 3,000
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PDSO-G3
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 5V
- Power - Max :
- 725mW
- Max Power Dissipation :
- 725mW
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Factory Lead Time :
- 13 Weeks
- Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Reference Standard :
- AEC-Q101
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 280mV
- Frequency - Transition :
- 150MHz
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 280mV @ 100mA, 1A
- Collector Emitter Breakdown Voltage :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 60V
- Max Collector Current :
- 1A
- Additional Feature :
- High Reliability
- Transistor Type :
- NPN
- Transition Frequency :
- 150MHz
- Datasheets
- DSS4160TQ-7
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
DSS4160TQ-7 Overview
In this device, the DC current gain is 200 @ 500mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 280mV @ 100mA, 1A.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
DSS4160TQ-7 Features
the DC current gain for this device is 200 @ 500mA 5V
the vce saturation(Max) is 280mV @ 100mA, 1A
a transition frequency of 150MHz
DSS4160TQ-7 Applications
There are a lot of Diodes Incorporated
DSS4160TQ-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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