DSS4160V-7
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- Mfr.Part #
- DSS4160V-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A SOT563
- Stock
- 182,197
- In Stock ：
- 182,197
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 60V
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 6
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 1.2mm
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 3.005049mg
- Terminal Form :
- Flat
- Max Power Dissipation :
- 600mW
- Collector Emitter Saturation Voltage :
- 250mV
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Transition Frequency :
- 150MHz
- Gain Bandwidth Product :
- 150MHz
- Terminal Position :
- Dual
- Base Part Number :
- DSS4160
- Radiation Hardening :
- No
- Power Dissipation :
- 600mW
- Number of Terminations :
- 6
- Pin Count :
- 6
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Height :
- 600μm
- Frequency :
- 150MHz
- Continuous Collector Current :
- 1A
- Collector Emitter Voltage (VCEO) :
- 60V
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Package / Case :
- SOT-563, SOT-666
- Mount :
- Surface Mount
- Length :
- 1.6mm
- REACH SVHC :
- No SVHC
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 100nA
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 1A
- Published :
- 2009
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 12 Weeks
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Base Voltage (VCBO) :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 5V
- Terminal Finish :
- Matte Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 100mA, 1A
- Datasheets
- DSS4160V-7
NPN -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SOT-563, SOT-666 Tape & Reel (TR) Surface Mount
DSS4160V-7 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500mA 5V.The collector emitter saturation voltage is 250mV, which allows for maximum design flexibility.When VCE saturation is 250mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 1A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 150MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
DSS4160V-7 Features
the DC current gain for this device is 200 @ 500mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
DSS4160V-7 Applications
There are a lot of Diodes Incorporated
DSS4160V-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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