DSS4160V-7
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- Mfr.Part #
- DSS4160V-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A SOT563
- Stock
- 182,197
- In Stock ：
- 182,197
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 1.2mm
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 100mA, 1A
- Continuous Collector Current :
- 1A
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Height :
- 600μm
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Transition Frequency :
- 150MHz
- Weight :
- 3.005049mg
- Max Breakdown Voltage :
- 60V
- Factory Lead Time :
- 12 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- Flat
- Radiation Hardening :
- No
- Terminal Finish :
- Matte Tin (Sn)
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 600mW
- Max Power Dissipation :
- 600mW
- Base Part Number :
- DSS4160
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Number of Terminations :
- 6
- Collector Emitter Breakdown Voltage :
- 60V
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 60V
- Terminal Position :
- Dual
- Package / Case :
- SOT-563, SOT-666
- Frequency :
- 150MHz
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 150MHz
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 5V
- Number of Pins :
- 6
- Current - Collector Cutoff (Max) :
- 100nA
- Pin Count :
- 6
- Collector Emitter Saturation Voltage :
- 250mV
- Max Collector Current :
- 1A
- Length :
- 1.6mm
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2009
- Collector Base Voltage (VCBO) :
- 80V
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- DSS4160V-7
NPN -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SOT-563, SOT-666 Tape & Reel (TR) Surface Mount
DSS4160V-7 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500mA 5V.The collector emitter saturation voltage is 250mV, which allows for maximum design flexibility.When VCE saturation is 250mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 1A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 150MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
DSS4160V-7 Features
the DC current gain for this device is 200 @ 500mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
DSS4160V-7 Applications
There are a lot of Diodes Incorporated
DSS4160V-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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