DSS4160V-7
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- Mfr.Part #
- DSS4160V-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A SOT563
- Stock
- 182,197
- In Stock ：
- 182,197
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Base Voltage (VCBO) :
- 80V
- Published :
- 2009
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Number of Pins :
- 6
- Length :
- 1.6mm
- Number of Terminations :
- 6
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 600mW
- Max Collector Current :
- 1A
- Package / Case :
- SOT-563, SOT-666
- Polarity/Channel Type :
- NPN
- Continuous Collector Current :
- 1A
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 250mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Gain Bandwidth Product :
- 150MHz
- Frequency :
- 150MHz
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Pin Count :
- 6
- Current - Collector Cutoff (Max) :
- 100nA
- Max Power Dissipation :
- 600mW
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 60V
- Transistor Type :
- NPN
- Transition Frequency :
- 150MHz
- Width :
- 1.2mm
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 100mA, 1A
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Base Part Number :
- DSS4160
- JESD-609 Code :
- e3
- Factory Lead Time :
- 12 Weeks
- Pbfree Code :
- yes
- Height :
- 600μm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 5V
- Terminal Finish :
- Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- Flat
- Peak Reflow Temperature (Cel) :
- 260
- Weight :
- 3.005049mg
- Datasheets
- DSS4160V-7
NPN -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SOT-563, SOT-666 Tape & Reel (TR) Surface Mount
DSS4160V-7 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500mA 5V.The collector emitter saturation voltage is 250mV, which allows for maximum design flexibility.When VCE saturation is 250mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 1A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 150MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
DSS4160V-7 Features
the DC current gain for this device is 200 @ 500mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
DSS4160V-7 Applications
There are a lot of Diodes Incorporated
DSS4160V-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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