DSS4160T-7
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- Mfr.Part #
- DSS4160T-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A SOT23-3
- Stock
- 1,443
- In Stock ：
- 1,443
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Factory Lead Time :
- 15 Weeks
- Max Power Dissipation :
- 725mW
- Published :
- 2013
- Power - Max :
- 725mW
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Additional Feature :
- High Reliability
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Transition Frequency :
- 150MHz
- Collector Base Voltage (VCBO) :
- 80V
- Number of Terminations :
- 3
- Length :
- 3mm
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Matte Tin (Sn)
- Max Collector Current :
- 1A
- Collector Emitter Breakdown Voltage :
- 60V
- Reference Standard :
- AEC-Q101
- Max Breakdown Voltage :
- 60V
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 7.994566mg
- Vce Saturation (Max) @ Ib, Ic :
- 280mV @ 100mA, 1A
- Element Configuration :
- Single
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 280mV
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 5V
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Height :
- 1.1mm
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Base Part Number :
- DSS4160
- Current - Collector Cutoff (Max) :
- 100nA
- Emitter Base Voltage (VEBO) :
- 5V
- Width :
- 1.4mm
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 150MHz
- Collector Emitter Voltage (VCEO) :
- 60V
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Datasheets
- DSS4160T-7
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
DSS4160T-7 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 500mA 5V.With a collector emitter saturation voltage of 280mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 280mV @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 1A volts at its maximum.
DSS4160T-7 Features
the DC current gain for this device is 200 @ 500mA 5V
a collector emitter saturation voltage of 280mV
the vce saturation(Max) is 280mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
DSS4160T-7 Applications
There are a lot of Diodes Incorporated
DSS4160T-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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