DSS4160T-7

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Mfr.Part #
DSS4160T-7
Manufacturer
Diodes Incorporated
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 60V 1A SOT23-3
Stock
1,443
In Stock :
1,443

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
ECCN Code :
EAR99
Packaging :
Tape and Reel (TR)
Polarity/Channel Type :
NPN
Mount :
Surface Mount
Terminal Form :
Gull wing
Additional Feature :
High Reliability
Pbfree Code :
yes
Vce Saturation (Max) @ Ib, Ic :
280mV @ 100mA, 1A
Height :
1.1mm
Gain Bandwidth Product :
150MHz
Current - Collector Cutoff (Max) :
100nA
Terminal Finish :
Matte Tin (Sn)
Emitter Base Voltage (VEBO) :
5V
Number of Terminations :
3
Collector Emitter Saturation Voltage :
280mV
Reference Standard :
AEC-Q101
Transition Frequency :
150MHz
Weight :
7.994566mg
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Time@Peak Reflow Temperature-Max (s) :
40
Operating Temperature :
-55°C~150°C TJ
Collector Emitter Breakdown Voltage :
60V
REACH SVHC :
No SVHC
Mounting Type :
Surface Mount
RoHS Status :
ROHS3 Compliant
Width :
1.4mm
JESD-609 Code :
e3
Package / Case :
TO-236-3, SC-59, SOT-23-3
Base Part Number :
DSS4160
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 500mA 5V
Max Breakdown Voltage :
60V
Number of Elements :
1
Collector Base Voltage (VCBO) :
80V
Terminal Position :
Dual
Factory Lead Time :
15 Weeks
Element Configuration :
Single
Max Power Dissipation :
725mW
Peak Reflow Temperature (Cel) :
260
Max Collector Current :
1A
Power - Max :
725mW
Transistor Element Material :
SILICON
Transistor Type :
NPN
Collector Emitter Voltage (VCEO) :
60V
Lead Free :
Lead Free
Length :
3mm
Published :
2013
Datasheets
DSS4160T-7
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated DSS4160T-7 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, Base Part Number:DSS4160, DSS4160T-7 pinout, DSS4160T-7 datasheet PDF, DSS4160T-7 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated DSS4160T-7 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DSS4160T-7


NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

DSS4160T-7 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 500mA 5V.With a collector emitter saturation voltage of 280mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 280mV @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 1A volts at its maximum.

DSS4160T-7 Features


the DC current gain for this device is 200 @ 500mA 5V
a collector emitter saturation voltage of 280mV
the vce saturation(Max) is 280mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz


DSS4160T-7 Applications


There are a lot of Diodes Incorporated
DSS4160T-7 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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