DSS4160FDB-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Emitter Voltage (VCEO) :

240mV

JESD-30 Code :

S-PDSO-N6

Polarity/Channel Type :

NPN

RoHS Status :

ROHS3 Compliant

Terminal Form :

NO LEAD

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Configuration :

SEPARATE, 2 ELEMENTS

Transistor Type :

2 NPN (Dual)

Factory Lead Time :

16 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 500mA 2V

Vce Saturation (Max) @ Ib, Ic :

240mV @ 50mA, 1A

Power - Max :

405mW

Transistor Application :

SWITCHING

Max Breakdown Voltage :

60V

Case Connection :

COLLECTOR

Max Power Dissipation :

405mW

Max Collector Current :

1A

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Breakdown Voltage :

60V

Current - Collector Cutoff (Max) :

100nA ICBO

Pbfree Code :

yes

Package / Case :

6-UDFN Exposed Pad

Number of Elements :

2

Mounting Type :

Surface Mount

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

6

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

JESD-609 Code :

e4

Transition Frequency :

175MHz

Frequency - Transition :

175MHz

Published :

2016

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)