DN2540N8-G
- Mfr.Part #
- DN2540N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 170MA TO243AA
- Stock
- 42
- In Stock :
- 42
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Maximum Operating Temperature :
- +150 °C
- Minimum Operating Temperature :
- -55 °C
- Qualification Status :
- Not Qualified
- Rds On (Max) @ Id, Vgs :
- 25 Ω @ 120mA, 0V
- MSL :
- MSL 1 - Unlimited
- Power Dissipation (Max) :
- 1.6W (Tc)
- FET Feature :
- Depletion Mode
- Polarity/Channel Type :
- N-Channel
- Published :
- 2013
- Manufacturer :
- Microchip
- RoHS Status :
- ROHS3 Compliant
- Channel Type :
- N
- Number of Channels :
- 1
- JEDEC-95 Code :
- TO-243AA
- Rise Time :
- 15ns
- RoHS :
- Details
- Base Product Number :
- DN2540
- Mount :
- Surface Mount
- Number of Elements per Chip :
- 1
- Fall Time (Typ) :
- 15 ns
- Reach Compliance Code :
- Compliant
- Turn-Off Delay Time :
- 15 ns
- Drain to Source Breakdown Voltage :
- 400V
- Factory Lead Time :
- 5 Weeks
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 25 Ω
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 25V
- Product Category :
- MOSFET
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- --
- Current - Continuous Drain (Id) @ 25°C :
- 170mA Tj
- Pulsed Drain Current-Max (IDM) :
- 0.5A
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Package Shape :
- RECTANGULAR
- Number of Pins :
- 3
- Number of Terminals :
- 3
- Continuous Drain Current Id :
- 170
- Terminal Position :
- Single
- Operating Mode :
- Depletion Mode
- Weight :
- 52.786812mg
- Product Type :
- MOSFET
- Gate to Source Voltage (Vgs) :
- 20V
- Package Type :
- TO-243AA
- Continuous Drain Current (ID) :
- 170mA
- Brand :
- Microchip Technology / Atmel
- Mounting Style :
- SMD/SMT
- FET Type :
- N-Channel
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Turn On Delay Time :
- 10 ns
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSSO-F3
- Qualification :
- -
- Height :
- 1.6mm
- Case Connection :
- DRAIN
- Drain to Source Voltage (Vdss) :
- 400V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs (Max) :
- ±20V
- Supplier Device Package :
- TO-243AA (SOT-89)
- Power Dissipation :
- 1.6W
- Product :
- MOSFET Small Signal
- Package / Case :
- TO-243AA
- Transistor Polarity :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Transistor Type :
- 1 N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Additional Feature :
- LOW THRESHOLD
- Surface Mount :
- yes
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation-Max (Abs) :
- 1.6 W
- Terminal Finish :
- Matte Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Channel Mode :
- Depletion
- Product Status :
- Active
- Width :
- 2.6mm
- Series :
- --
- Type :
- FET
- Number of Elements :
- 1
- Length :
- 4.6mm
- Power Dissipation-Max :
- 1.6W Tc
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- Terminal Form :
- Flat
- Configuration :
- Single
- Datasheets
- DN2540N8-G

N-Channel Tape & Reel (TR) 25 Ω @ 120mA, 0V ±20V 300pF @ 25V 400V TO-243AA
DN2540N8-G Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 300pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 170mA.With a drain-source breakdown voltage of 400V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 400V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 15 ns.Peak drain current for this device is 0.5A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 400V.Using drive voltage (0V) reduces this device's overall power consumption.
DN2540N8-G Features
a continuous drain current (ID) of 170mA
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 0.5A.
a 400V drain to source voltage (Vdss)
DN2540N8-G Applications
There are a lot of Microchip Technology
DN2540N8-G applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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