DN2540N5-G

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Mfr.Part #
DN2540N5-G
Manufacturer
Microchip Technology
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 400V 500MA TO220-3
Stock
7,158
In Stock :
7,158

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current :
0.5(A)
Manufacturer :
Microchip
Terminal Finish :
MATTE TIN
FET Type :
N-Channel
Turn-Off Delay Time :
15 ns
Operating Temperature :
-55°C~150°C TJ
Width :
4.83mm
Product Status :
Active
Drive Voltage (Max Rds On,Min Rds On) :
0V
Transistor Type :
1 N-Channel
Product Type :
MOSFET
Number of Terminations :
3
REACH SVHC :
No SVHC
Power Dissipation :
15W
Terminal Position :
Single
Height :
22.86mm
Turn On Delay Time :
10 ns
Supplier Device Package :
TO-220-3
Drain-source On Resistance-Max :
25 Ω
Brand :
Microchip Technology / Atmel
Packaging :
Tube
Package / Case :
TO-220-3
Operating Temperature Classification :
Military
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Elements per Chip :
1
Power Dissipation (Max) :
15W (Tc)
Fall Time (Typ) :
20 ns
Number of Terminals :
3
Rds On (Max) @ Id, Vgs :
25 Ω @ 120mA, 0V
Gate to Source Voltage (Vgs) :
20V
Factory Lead Time :
5 Weeks
Weight :
6.000006g
Mount :
Through Hole
Element Configuration :
Single
Case Connection :
DRAIN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Series :
--
Transistor Polarity :
N-Channel
Channel Type :
N Channel
Qualification Status :
Not Qualified
Gate-Source Voltage (Max) :
±20(V)
Drain-Source On-Volt :
400(V)
Reach Compliance Code :
Compliant
Power Dissipation-Max (Abs) :
15 W
Continuous Drain Current Id :
500
Threshold Voltage :
-1.5V
Type :
Power MOSFET
Vgs(th) (Max) @ Id :
--
Terminal Form :
THROUGH-HOLE
Polarity/Channel Type :
N-Channel
Length :
10.67mm
Package Type :
TO-220
Surface Mount :
No
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Maximum Operating Temperature :
+150 °C
Additional Feature :
LOW THRESHOLD
Polarity :
N
Continuous Drain Current (ID) :
500mA
JEDEC-95 Code :
TO-220AB
Pulsed Drain Current-Max (IDM) :
0.5A
Transistor Application :
SWITCHING
Package :
Tube
Rad Hardened :
No
Number of Channels :
1
Rise Time :
15ns
Power Dissipation-Max :
15W Tc
Operating Temp Range :
-55C to 150C
Radiation Hardening :
No
Current - Continuous Drain (Id) @ 25°C :
500mA Tj
Package Shape :
RECTANGULAR
Published :
2013
Qualification :
-
Drain Current-Max (Abs) (ID) :
0.5A
RoHS Status :
ROHS3 Compliant
Drain to Source Breakdown Voltage :
400V
Drain to Source Voltage (Vdss) :
400V
Number of Pins :
3
Input Capacitance (Ciss) (Max) @ Vds :
300pF @ 25V
JESD-30 Code :
R-PSFM-T3
HTS Code :
8541.29.00.95
Mounting Type :
Through Hole
Mounting Style :
Through Hole
JESD-609 Code :
e3
Operating Mode :
Depletion Mode
ECCN Code :
EAR99
MSL :
-
Number of Elements :
1
Channel Mode :
Depletion
Configuration :
Single
Pin Count :
3 +Tab
Product Category :
MOSFET
Minimum Operating Temperature :
-55 °C
Mounting :
Through Hole
FET Feature :
Depletion Mode
Transistor Element Material :
SILICON
Base Product Number :
DN2540
RoHS :
Details
Vgs (Max) :
±20V
Datasheets
DN2540N5-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN2540N5-G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-220-3, Type:Power MOSFET, Number of Channels:1, Number of Pins:3, Mounting Type:Through Hole, DN2540N5-G pinout, DN2540N5-G datasheet PDF, DN2540N5-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN2540N5-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN2540N5-G


N-Channel Tube 25 Ω @ 120mA, 0V ±20V 300pF @ 25V 400V TO-220-3

DN2540N5-G Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 300pF @ 25V.This device conducts a continuous drain current (ID) of 500mA, which is the maximum continuous current transistor can conduct.Using VGS=400V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 400V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.5A.When the device is turned off, a turn-off delay time of 15 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 0.5A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -1.5V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 0V volts (0V).

DN2540N5-G Features


a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 0.5A.
a threshold voltage of -1.5V
a 400V drain to source voltage (Vdss)


DN2540N5-G Applications


There are a lot of Microchip Technology
DN2540N5-G applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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