DN2540N5-G

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Mfr.Part #
DN2540N5-G
Manufacturer
Microchip Technology
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 400V 500MA TO220-3
Stock
7,158
In Stock :
7,158

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Polarity :
N-Channel
Packaging :
Tube
Weight :
6.000006g
Threshold Voltage :
-1.5V
Element Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
500mA Tj
Length :
10.67mm
Factory Lead Time :
5 Weeks
Package Type :
TO-220
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On) :
0V
Qualification Status :
Not Qualified
Turn On Delay Time :
10 ns
Lead Free :
Lead Free
Package :
Tube
Product Status :
Active
REACH SVHC :
No SVHC
Terminal Form :
THROUGH-HOLE
JESD-30 Code :
R-PSFM-T3
Number of Terminations :
3
Configuration :
Single
Power Dissipation :
15W
Mounting Type :
Through Hole
Type :
Power MOSFET
Fall Time (Typ) :
20 ns
Published :
2013
Power Dissipation (Max) :
15W (Tc)
Height :
22.86mm
Gate to Source Voltage (Vgs) :
20V
Rds On (Max) @ Id, Vgs :
25 Ω @ 120mA, 0V
Mounting Style :
Through Hole
Rise Time :
15ns
Operating Temp Range :
-55C to 150C
Drain-Source On-Volt :
400(V)
Case Connection :
DRAIN
JESD-609 Code :
e3
Number of Channels :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max (Abs) :
15 W
Power Dissipation-Max :
15W Tc
ECCN Code :
EAR99
Vgs(th) (Max) @ Id :
--
Radiation Hardening :
No
Operating Mode :
Depletion Mode
Additional Feature :
LOW THRESHOLD
Continuous Drain Current :
0.5(A)
Maximum Operating Temperature :
+150 °C
Number of Pins :
3
Reach Compliance Code :
Compliant
Continuous Drain Current Id :
500
Manufacturer :
Microchip
Vgs (Max) :
±20V
Product Category :
MOSFET
Transistor Type :
1 N-Channel
Transistor Application :
SWITCHING
Qualification :
-
Drain to Source Breakdown Voltage :
400V
Drain Current-Max (Abs) (ID) :
0.5A
Pin Count :
3 +Tab
Pulsed Drain Current-Max (IDM) :
0.5A
Minimum Operating Temperature :
-55 °C
JEDEC-95 Code :
TO-220AB
Rad Hardened :
No
Input Capacitance (Ciss) (Max) @ Vds :
300pF @ 25V
Product Type :
MOSFET
Turn-Off Delay Time :
15 ns
Drain-source On Resistance-Max :
25 Ω
Gate-Source Voltage (Max) :
±20(V)
Mount :
Through Hole
MSL :
-
Surface Mount :
No
Terminal Finish :
MATTE TIN
Supplier Device Package :
TO-220-3
Width :
4.83mm
HTS Code :
8541.29.00.95
Channel Mode :
Depletion
Channel Type :
N Channel
Number of Elements :
1
FET Type :
N-Channel
Transistor Element Material :
SILICON
Brand :
Microchip Technology / Atmel
Series :
--
Operating Temperature :
-55°C~150°C TJ
FET Feature :
Depletion Mode
Mounting :
Through Hole
Operating Temperature Classification :
Military
RoHS :
Details
Number of Elements per Chip :
1
Package / Case :
TO-220-3
Number of Terminals :
3
Polarity/Channel Type :
N-Channel
Drain to Source Voltage (Vdss) :
400V
Continuous Drain Current (ID) :
500mA
Terminal Position :
Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Base Product Number :
DN2540
Package Shape :
RECTANGULAR
Polarity :
N
Datasheets
DN2540N5-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN2540N5-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Type:Power MOSFET, Number of Channels:1, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, DN2540N5-G pinout, DN2540N5-G datasheet PDF, DN2540N5-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN2540N5-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN2540N5-G


N-Channel Tube 25 Ω @ 120mA, 0V ±20V 300pF @ 25V 400V TO-220-3

DN2540N5-G Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 300pF @ 25V.This device conducts a continuous drain current (ID) of 500mA, which is the maximum continuous current transistor can conduct.Using VGS=400V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 400V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.5A.When the device is turned off, a turn-off delay time of 15 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 0.5A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -1.5V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 0V volts (0V).

DN2540N5-G Features


a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 0.5A.
a threshold voltage of -1.5V
a 400V drain to source voltage (Vdss)


DN2540N5-G Applications


There are a lot of Microchip Technology
DN2540N5-G applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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