DN2540N5-G
- Mfr.Part #
- DN2540N5-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 500MA TO220-3
- Stock
- 7,158
- In Stock :
- 7,158
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Qualification Status :
- Not Qualified
- Rds On (Max) @ Id, Vgs :
- 25 Ω @ 120mA, 0V
- Drain-source On Resistance-Max :
- 25 Ω
- Rise Time :
- 15ns
- Mounting :
- Through Hole
- Width :
- 4.83mm
- Manufacturer :
- Microchip
- Number of Terminations :
- 3
- Terminal Finish :
- MATTE TIN
- Fall Time (Typ) :
- 20 ns
- Power Dissipation (Max) :
- 15W (Tc)
- Brand :
- Microchip Technology / Atmel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3 +Tab
- Transistor Application :
- SWITCHING
- Power Dissipation-Max (Abs) :
- 15 W
- Drain to Source Breakdown Voltage :
- 400V
- Number of Channels :
- 1
- JESD-609 Code :
- e3
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 500mA Tj
- Factory Lead Time :
- 5 Weeks
- Power Dissipation :
- 15W
- Element Configuration :
- Single
- Package / Case :
- TO-220-3
- Turn On Delay Time :
- 10 ns
- Mounting Style :
- Through Hole
- Length :
- 10.67mm
- Operating Temp Range :
- -55C to 150C
- Vgs(th) (Max) @ Id :
- --
- Gate-Source Voltage (Max) :
- ±20(V)
- Mounting Type :
- Through Hole
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate to Source Voltage (Vgs) :
- 20V
- Polarity :
- N
- ECCN Code :
- EAR99
- Terminal Position :
- Single
- Number of Elements per Chip :
- 1
- Minimum Operating Temperature :
- -55 °C
- Package :
- Tube
- Additional Feature :
- LOW THRESHOLD
- Number of Terminals :
- 3
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Drain-Source On-Volt :
- 400(V)
- Continuous Drain Current :
- 0.5(A)
- Product Type :
- MOSFET
- Transistor Polarity :
- N-Channel
- Continuous Drain Current (ID) :
- 500mA
- Number of Elements :
- 1
- Mount :
- Through Hole
- Supplier Device Package :
- TO-220-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Qualification :
- -
- Series :
- --
- Drain to Source Voltage (Vdss) :
- 400V
- Operating Mode :
- Depletion Mode
- Base Product Number :
- DN2540
- Package Shape :
- RECTANGULAR
- JEDEC-95 Code :
- TO-220AB
- Configuration :
- Single
- Reach Compliance Code :
- Compliant
- Product Status :
- Active
- Continuous Drain Current Id :
- 500
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 25V
- Rad Hardened :
- No
- Drain Current-Max (Abs) (ID) :
- 0.5A
- Height :
- 22.86mm
- Weight :
- 6.000006g
- MSL :
- -
- Pulsed Drain Current-Max (IDM) :
- 0.5A
- Packaging :
- Tube
- Maximum Operating Temperature :
- +150 °C
- Product Category :
- MOSFET
- FET Type :
- N-Channel
- Type :
- Power MOSFET
- REACH SVHC :
- No SVHC
- Operating Temperature Classification :
- Military
- Power Dissipation-Max :
- 15W Tc
- Terminal Form :
- THROUGH-HOLE
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-PSFM-T3
- Channel Type :
- N Channel
- RoHS :
- Details
- Published :
- 2013
- Transistor Type :
- 1 N-Channel
- Lead Free :
- Lead Free
- Surface Mount :
- No
- Threshold Voltage :
- -1.5V
- HTS Code :
- 8541.29.00.95
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- N-Channel
- Turn-Off Delay Time :
- 15 ns
- Channel Mode :
- Depletion
- FET Feature :
- Depletion Mode
- Package Type :
- TO-220
- Datasheets
- DN2540N5-G

N-Channel Tube 25 Ω @ 120mA, 0V ±20V 300pF @ 25V 400V TO-220-3
DN2540N5-G Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 300pF @ 25V.This device conducts a continuous drain current (ID) of 500mA, which is the maximum continuous current transistor can conduct.Using VGS=400V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 400V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.5A.When the device is turned off, a turn-off delay time of 15 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 0.5A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -1.5V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 0V volts (0V).
DN2540N5-G Features
a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 0.5A.
a threshold voltage of -1.5V
a 400V drain to source voltage (Vdss)
DN2540N5-G Applications
There are a lot of Microchip Technology
DN2540N5-G applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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