DN2540N5-G
- Mfr.Part #
- DN2540N5-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 500MA TO220-3
- Stock
- 7,158
- In Stock :
- 7,158
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Polarity :
- N-Channel
- Packaging :
- Tube
- Weight :
- 6.000006g
- Threshold Voltage :
- -1.5V
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 500mA Tj
- Length :
- 10.67mm
- Factory Lead Time :
- 5 Weeks
- Package Type :
- TO-220
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Qualification Status :
- Not Qualified
- Turn On Delay Time :
- 10 ns
- Lead Free :
- Lead Free
- Package :
- Tube
- Product Status :
- Active
- REACH SVHC :
- No SVHC
- Terminal Form :
- THROUGH-HOLE
- JESD-30 Code :
- R-PSFM-T3
- Number of Terminations :
- 3
- Configuration :
- Single
- Power Dissipation :
- 15W
- Mounting Type :
- Through Hole
- Type :
- Power MOSFET
- Fall Time (Typ) :
- 20 ns
- Published :
- 2013
- Power Dissipation (Max) :
- 15W (Tc)
- Height :
- 22.86mm
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 25 Ω @ 120mA, 0V
- Mounting Style :
- Through Hole
- Rise Time :
- 15ns
- Operating Temp Range :
- -55C to 150C
- Drain-Source On-Volt :
- 400(V)
- Case Connection :
- DRAIN
- JESD-609 Code :
- e3
- Number of Channels :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max (Abs) :
- 15 W
- Power Dissipation-Max :
- 15W Tc
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- --
- Radiation Hardening :
- No
- Operating Mode :
- Depletion Mode
- Additional Feature :
- LOW THRESHOLD
- Continuous Drain Current :
- 0.5(A)
- Maximum Operating Temperature :
- +150 °C
- Number of Pins :
- 3
- Reach Compliance Code :
- Compliant
- Continuous Drain Current Id :
- 500
- Manufacturer :
- Microchip
- Vgs (Max) :
- ±20V
- Product Category :
- MOSFET
- Transistor Type :
- 1 N-Channel
- Transistor Application :
- SWITCHING
- Qualification :
- -
- Drain to Source Breakdown Voltage :
- 400V
- Drain Current-Max (Abs) (ID) :
- 0.5A
- Pin Count :
- 3 +Tab
- Pulsed Drain Current-Max (IDM) :
- 0.5A
- Minimum Operating Temperature :
- -55 °C
- JEDEC-95 Code :
- TO-220AB
- Rad Hardened :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 25V
- Product Type :
- MOSFET
- Turn-Off Delay Time :
- 15 ns
- Drain-source On Resistance-Max :
- 25 Ω
- Gate-Source Voltage (Max) :
- ±20(V)
- Mount :
- Through Hole
- MSL :
- -
- Surface Mount :
- No
- Terminal Finish :
- MATTE TIN
- Supplier Device Package :
- TO-220-3
- Width :
- 4.83mm
- HTS Code :
- 8541.29.00.95
- Channel Mode :
- Depletion
- Channel Type :
- N Channel
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Brand :
- Microchip Technology / Atmel
- Series :
- --
- Operating Temperature :
- -55°C~150°C TJ
- FET Feature :
- Depletion Mode
- Mounting :
- Through Hole
- Operating Temperature Classification :
- Military
- RoHS :
- Details
- Number of Elements per Chip :
- 1
- Package / Case :
- TO-220-3
- Number of Terminals :
- 3
- Polarity/Channel Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 400V
- Continuous Drain Current (ID) :
- 500mA
- Terminal Position :
- Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Base Product Number :
- DN2540
- Package Shape :
- RECTANGULAR
- Polarity :
- N
- Datasheets
- DN2540N5-G

N-Channel Tube 25 Ω @ 120mA, 0V ±20V 300pF @ 25V 400V TO-220-3
DN2540N5-G Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 300pF @ 25V.This device conducts a continuous drain current (ID) of 500mA, which is the maximum continuous current transistor can conduct.Using VGS=400V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 400V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.5A.When the device is turned off, a turn-off delay time of 15 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 0.5A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -1.5V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 0V volts (0V).
DN2540N5-G Features
a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 0.5A.
a threshold voltage of -1.5V
a 400V drain to source voltage (Vdss)
DN2540N5-G Applications
There are a lot of Microchip Technology
DN2540N5-G applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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