DN2540N5-G

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Mfr.Part #
DN2540N5-G
Manufacturer
Microchip Technology
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 400V 500MA TO220-3
Stock
7,158
In Stock :
7,158

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Package Shape :
RECTANGULAR
Rise Time :
15ns
ECCN Code :
EAR99
Product Type :
MOSFET
Drain Current-Max (Abs) (ID) :
0.5A
Rds On (Max) @ Id, Vgs :
25 Ω @ 120mA, 0V
Terminal Form :
THROUGH-HOLE
Maximum Operating Temperature :
+150 °C
Transistor Application :
SWITCHING
Channel Type :
N Channel
Number of Elements :
1
Drain to Source Voltage (Vdss) :
400V
Package Type :
TO-220
Element Configuration :
Single
Published :
2013
Continuous Drain Current (ID) :
500mA
Product Status :
Active
Power Dissipation (Max) :
15W (Tc)
Operating Temperature Classification :
Military
Number of Channels :
1
Radiation Hardening :
No
Weight :
6.000006g
Polarity :
N
Brand :
Microchip Technology / Atmel
Mounting Type :
Through Hole
Power Dissipation-Max (Abs) :
15 W
Packaging :
Tube
RoHS :
Details
Rad Hardened :
No
Number of Elements per Chip :
1
Drain-Source On-Volt :
400(V)
Type :
Power MOSFET
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate-Source Voltage (Max) :
±20(V)
Power Dissipation :
15W
Factory Lead Time :
5 Weeks
Turn-Off Delay Time :
15 ns
Operating Temp Range :
-55C to 150C
Operating Temperature :
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On) :
0V
Current - Continuous Drain (Id) @ 25°C :
500mA Tj
Power Dissipation-Max :
15W Tc
Terminal Finish :
MATTE TIN
Product Category :
MOSFET
Series :
--
Width :
4.83mm
Number of Terminations :
3
Turn On Delay Time :
10 ns
FET Feature :
Depletion Mode
Fall Time (Typ) :
20 ns
RoHS Status :
ROHS3 Compliant
Base Product Number :
DN2540
Vgs(th) (Max) @ Id :
--
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mounting :
Through Hole
Operating Mode :
Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds :
300pF @ 25V
Transistor Element Material :
SILICON
JESD-609 Code :
e3
Configuration :
Single
Number of Terminals :
3
Number of Pins :
3
Qualification Status :
Not Qualified
Supplier Device Package :
TO-220-3
JEDEC-95 Code :
TO-220AB
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
1 N-Channel
Pin Count :
3 +Tab
Drain to Source Breakdown Voltage :
400V
Surface Mount :
No
Gate to Source Voltage (Vgs) :
20V
Minimum Operating Temperature :
-55 °C
Additional Feature :
LOW THRESHOLD
MSL :
-
FET Type :
N-Channel
Transistor Polarity :
N-Channel
Channel Mode :
Depletion
Case Connection :
DRAIN
Polarity/Channel Type :
N-Channel
Lead Free :
Lead Free
Vgs (Max) :
±20V
Terminal Position :
Single
Height :
22.86mm
Pulsed Drain Current-Max (IDM) :
0.5A
REACH SVHC :
No SVHC
Continuous Drain Current :
0.5(A)
JESD-30 Code :
R-PSFM-T3
Manufacturer :
Microchip
Reach Compliance Code :
Compliant
Qualification :
-
Continuous Drain Current Id :
500
Length :
10.67mm
HTS Code :
8541.29.00.95
Mounting Style :
Through Hole
Threshold Voltage :
-1.5V
Package / Case :
TO-220-3
Mount :
Through Hole
Drain-source On Resistance-Max :
25 Ω
Package :
Tube
Datasheets
DN2540N5-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN2540N5-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Mounting Type:Through Hole, Type:Power MOSFET, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Pins:3, Package / Case:TO-220-3, DN2540N5-G pinout, DN2540N5-G datasheet PDF, DN2540N5-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN2540N5-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN2540N5-G


N-Channel Tube 25 Ω @ 120mA, 0V ±20V 300pF @ 25V 400V TO-220-3

DN2540N5-G Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 300pF @ 25V.This device conducts a continuous drain current (ID) of 500mA, which is the maximum continuous current transistor can conduct.Using VGS=400V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 400V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.5A.When the device is turned off, a turn-off delay time of 15 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 0.5A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -1.5V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 0V volts (0V).

DN2540N5-G Features


a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 0.5A.
a threshold voltage of -1.5V
a 400V drain to source voltage (Vdss)


DN2540N5-G Applications


There are a lot of Microchip Technology
DN2540N5-G applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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