DN2540N5-G
- Mfr.Part #
- DN2540N5-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 500MA TO220-3
- Stock
- 7,158
- In Stock :
- 7,158
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current :
- 0.5(A)
- Manufacturer :
- Microchip
- Terminal Finish :
- MATTE TIN
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 15 ns
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 4.83mm
- Product Status :
- Active
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Transistor Type :
- 1 N-Channel
- Product Type :
- MOSFET
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 15W
- Terminal Position :
- Single
- Height :
- 22.86mm
- Turn On Delay Time :
- 10 ns
- Supplier Device Package :
- TO-220-3
- Drain-source On Resistance-Max :
- 25 Ω
- Brand :
- Microchip Technology / Atmel
- Packaging :
- Tube
- Package / Case :
- TO-220-3
- Operating Temperature Classification :
- Military
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Elements per Chip :
- 1
- Power Dissipation (Max) :
- 15W (Tc)
- Fall Time (Typ) :
- 20 ns
- Number of Terminals :
- 3
- Rds On (Max) @ Id, Vgs :
- 25 Ω @ 120mA, 0V
- Gate to Source Voltage (Vgs) :
- 20V
- Factory Lead Time :
- 5 Weeks
- Weight :
- 6.000006g
- Mount :
- Through Hole
- Element Configuration :
- Single
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Series :
- --
- Transistor Polarity :
- N-Channel
- Channel Type :
- N Channel
- Qualification Status :
- Not Qualified
- Gate-Source Voltage (Max) :
- ±20(V)
- Drain-Source On-Volt :
- 400(V)
- Reach Compliance Code :
- Compliant
- Power Dissipation-Max (Abs) :
- 15 W
- Continuous Drain Current Id :
- 500
- Threshold Voltage :
- -1.5V
- Type :
- Power MOSFET
- Vgs(th) (Max) @ Id :
- --
- Terminal Form :
- THROUGH-HOLE
- Polarity/Channel Type :
- N-Channel
- Length :
- 10.67mm
- Package Type :
- TO-220
- Surface Mount :
- No
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Maximum Operating Temperature :
- +150 °C
- Additional Feature :
- LOW THRESHOLD
- Polarity :
- N
- Continuous Drain Current (ID) :
- 500mA
- JEDEC-95 Code :
- TO-220AB
- Pulsed Drain Current-Max (IDM) :
- 0.5A
- Transistor Application :
- SWITCHING
- Package :
- Tube
- Rad Hardened :
- No
- Number of Channels :
- 1
- Rise Time :
- 15ns
- Power Dissipation-Max :
- 15W Tc
- Operating Temp Range :
- -55C to 150C
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 500mA Tj
- Package Shape :
- RECTANGULAR
- Published :
- 2013
- Qualification :
- -
- Drain Current-Max (Abs) (ID) :
- 0.5A
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 400V
- Drain to Source Voltage (Vdss) :
- 400V
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 25V
- JESD-30 Code :
- R-PSFM-T3
- HTS Code :
- 8541.29.00.95
- Mounting Type :
- Through Hole
- Mounting Style :
- Through Hole
- JESD-609 Code :
- e3
- Operating Mode :
- Depletion Mode
- ECCN Code :
- EAR99
- MSL :
- -
- Number of Elements :
- 1
- Channel Mode :
- Depletion
- Configuration :
- Single
- Pin Count :
- 3 +Tab
- Product Category :
- MOSFET
- Minimum Operating Temperature :
- -55 °C
- Mounting :
- Through Hole
- FET Feature :
- Depletion Mode
- Transistor Element Material :
- SILICON
- Base Product Number :
- DN2540
- RoHS :
- Details
- Vgs (Max) :
- ±20V
- Datasheets
- DN2540N5-G

N-Channel Tube 25 Ω @ 120mA, 0V ±20V 300pF @ 25V 400V TO-220-3
DN2540N5-G Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 300pF @ 25V.This device conducts a continuous drain current (ID) of 500mA, which is the maximum continuous current transistor can conduct.Using VGS=400V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 400V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.5A.When the device is turned off, a turn-off delay time of 15 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 0.5A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -1.5V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 0V volts (0V).
DN2540N5-G Features
a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 0.5A.
a threshold voltage of -1.5V
a 400V drain to source voltage (Vdss)
DN2540N5-G Applications
There are a lot of Microchip Technology
DN2540N5-G applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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