DN2540N5-G

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Mfr.Part #
DN2540N5-G
Manufacturer
Microchip Technology
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 400V 500MA TO220-3
Stock
7,158
In Stock :
7,158

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Qualification Status :
Not Qualified
Rds On (Max) @ Id, Vgs :
25 Ω @ 120mA, 0V
Drain-source On Resistance-Max :
25 Ω
Rise Time :
15ns
Mounting :
Through Hole
Width :
4.83mm
Manufacturer :
Microchip
Number of Terminations :
3
Terminal Finish :
MATTE TIN
Fall Time (Typ) :
20 ns
Power Dissipation (Max) :
15W (Tc)
Brand :
Microchip Technology / Atmel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
3 +Tab
Transistor Application :
SWITCHING
Power Dissipation-Max (Abs) :
15 W
Drain to Source Breakdown Voltage :
400V
Number of Channels :
1
JESD-609 Code :
e3
Case Connection :
DRAIN
Current - Continuous Drain (Id) @ 25°C :
500mA Tj
Factory Lead Time :
5 Weeks
Power Dissipation :
15W
Element Configuration :
Single
Package / Case :
TO-220-3
Turn On Delay Time :
10 ns
Mounting Style :
Through Hole
Length :
10.67mm
Operating Temp Range :
-55C to 150C
Vgs(th) (Max) @ Id :
--
Gate-Source Voltage (Max) :
±20(V)
Mounting Type :
Through Hole
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs) :
20V
Polarity :
N
ECCN Code :
EAR99
Terminal Position :
Single
Number of Elements per Chip :
1
Minimum Operating Temperature :
-55 °C
Package :
Tube
Additional Feature :
LOW THRESHOLD
Number of Terminals :
3
Radiation Hardening :
No
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs (Max) :
±20V
Drain-Source On-Volt :
400(V)
Continuous Drain Current :
0.5(A)
Product Type :
MOSFET
Transistor Polarity :
N-Channel
Continuous Drain Current (ID) :
500mA
Number of Elements :
1
Mount :
Through Hole
Supplier Device Package :
TO-220-3
Drive Voltage (Max Rds On,Min Rds On) :
0V
Qualification :
-
Series :
--
Drain to Source Voltage (Vdss) :
400V
Operating Mode :
Depletion Mode
Base Product Number :
DN2540
Package Shape :
RECTANGULAR
JEDEC-95 Code :
TO-220AB
Configuration :
Single
Reach Compliance Code :
Compliant
Product Status :
Active
Continuous Drain Current Id :
500
Input Capacitance (Ciss) (Max) @ Vds :
300pF @ 25V
Rad Hardened :
No
Drain Current-Max (Abs) (ID) :
0.5A
Height :
22.86mm
Weight :
6.000006g
MSL :
-
Pulsed Drain Current-Max (IDM) :
0.5A
Packaging :
Tube
Maximum Operating Temperature :
+150 °C
Product Category :
MOSFET
FET Type :
N-Channel
Type :
Power MOSFET
REACH SVHC :
No SVHC
Operating Temperature Classification :
Military
Power Dissipation-Max :
15W Tc
Terminal Form :
THROUGH-HOLE
Number of Pins :
3
RoHS Status :
ROHS3 Compliant
JESD-30 Code :
R-PSFM-T3
Channel Type :
N Channel
RoHS :
Details
Published :
2013
Transistor Type :
1 N-Channel
Lead Free :
Lead Free
Surface Mount :
No
Threshold Voltage :
-1.5V
HTS Code :
8541.29.00.95
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~150°C TJ
Polarity/Channel Type :
N-Channel
Turn-Off Delay Time :
15 ns
Channel Mode :
Depletion
FET Feature :
Depletion Mode
Package Type :
TO-220
Datasheets
DN2540N5-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN2540N5-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Channels:1, Package / Case:TO-220-3, Mounting Type:Through Hole, Type:Power MOSFET, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, DN2540N5-G pinout, DN2540N5-G datasheet PDF, DN2540N5-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN2540N5-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN2540N5-G


N-Channel Tube 25 Ω @ 120mA, 0V ±20V 300pF @ 25V 400V TO-220-3

DN2540N5-G Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 300pF @ 25V.This device conducts a continuous drain current (ID) of 500mA, which is the maximum continuous current transistor can conduct.Using VGS=400V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 400V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.5A.When the device is turned off, a turn-off delay time of 15 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 0.5A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -1.5V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 0V volts (0V).

DN2540N5-G Features


a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 0.5A.
a threshold voltage of -1.5V
a 400V drain to source voltage (Vdss)


DN2540N5-G Applications


There are a lot of Microchip Technology
DN2540N5-G applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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