DN2540N5-G
- Mfr.Part #
- DN2540N5-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 500MA TO220-3
- Stock
- 7,158
- In Stock :
- 7,158
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Type :
- MOSFET
- Current - Continuous Drain (Id) @ 25°C :
- 500mA Tj
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Polarity/Channel Type :
- N-Channel
- Power Dissipation-Max (Abs) :
- 15 W
- Width :
- 4.83mm
- FET Feature :
- Depletion Mode
- Vgs(th) (Max) @ Id :
- --
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Published :
- 2013
- Number of Terminals :
- 3
- Mounting Style :
- Through Hole
- Gate-Source Voltage (Max) :
- ±20(V)
- Drain to Source Voltage (Vdss) :
- 400V
- Drain-source On Resistance-Max :
- 25 Ω
- Product Status :
- Active
- Pulsed Drain Current-Max (IDM) :
- 0.5A
- Threshold Voltage :
- -1.5V
- Continuous Drain Current :
- 0.5(A)
- REACH SVHC :
- No SVHC
- Reach Compliance Code :
- Compliant
- Package Type :
- TO-220
- Turn-Off Delay Time :
- 15 ns
- Transistor Application :
- SWITCHING
- Manufacturer :
- Microchip
- Gate to Source Voltage (Vgs) :
- 20V
- Radiation Hardening :
- No
- JEDEC-95 Code :
- TO-220AB
- Qualification :
- -
- Power Dissipation (Max) :
- 15W (Tc)
- RoHS :
- Details
- Mounting Type :
- Through Hole
- Mounting :
- Through Hole
- Series :
- --
- Configuration :
- Single
- Product Category :
- MOSFET
- Base Product Number :
- DN2540
- JESD-30 Code :
- R-PSFM-T3
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 25V
- Length :
- 10.67mm
- Rad Hardened :
- No
- Operating Temp Range :
- -55C to 150C
- Maximum Operating Temperature :
- +150 °C
- Qualification Status :
- Not Qualified
- Polarity :
- N
- Operating Temperature Classification :
- Military
- Continuous Drain Current (ID) :
- 500mA
- Pin Count :
- 3 +Tab
- Number of Elements per Chip :
- 1
- Channel Mode :
- Depletion
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-Source On-Volt :
- 400(V)
- Brand :
- Microchip Technology / Atmel
- MSL :
- -
- Drain to Source Breakdown Voltage :
- 400V
- Package Shape :
- RECTANGULAR
- Power Dissipation-Max :
- 15W Tc
- Supplier Device Package :
- TO-220-3
- Element Configuration :
- Single
- Transistor Type :
- 1 N-Channel
- Number of Channels :
- 1
- Power Dissipation :
- 15W
- Factory Lead Time :
- 5 Weeks
- HTS Code :
- 8541.29.00.95
- Terminal Position :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Fall Time (Typ) :
- 20 ns
- Turn On Delay Time :
- 10 ns
- Transistor Polarity :
- N-Channel
- Type :
- Power MOSFET
- Terminal Finish :
- MATTE TIN
- Package :
- Tube
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 25 Ω @ 120mA, 0V
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Terminal Form :
- THROUGH-HOLE
- Number of Elements :
- 1
- Operating Mode :
- Depletion Mode
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- Channel Type :
- N Channel
- Continuous Drain Current Id :
- 500
- Number of Terminations :
- 3
- Minimum Operating Temperature :
- -55 °C
- Packaging :
- Tube
- Additional Feature :
- LOW THRESHOLD
- Drain Current-Max (Abs) (ID) :
- 0.5A
- Weight :
- 6.000006g
- Surface Mount :
- No
- Height :
- 22.86mm
- Rise Time :
- 15ns
- Package / Case :
- TO-220-3
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Datasheets
- DN2540N5-G
DN2540N5-G Documents

N-Channel Tube 25 Ω @ 120mA, 0V ±20V 300pF @ 25V 400V TO-220-3
DN2540N5-G Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 300pF @ 25V.This device conducts a continuous drain current (ID) of 500mA, which is the maximum continuous current transistor can conduct.Using VGS=400V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 400V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.5A.When the device is turned off, a turn-off delay time of 15 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 0.5A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -1.5V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 0V volts (0V).
DN2540N5-G Features
a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 0.5A.
a threshold voltage of -1.5V
a 400V drain to source voltage (Vdss)
DN2540N5-G Applications
There are a lot of Microchip Technology
DN2540N5-G applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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