DN2540N5-G
- Mfr.Part #
- DN2540N5-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 500MA TO220-3
- Stock
- 7,158
- In Stock :
- 7,158
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package Shape :
- RECTANGULAR
- Rise Time :
- 15ns
- ECCN Code :
- EAR99
- Product Type :
- MOSFET
- Drain Current-Max (Abs) (ID) :
- 0.5A
- Rds On (Max) @ Id, Vgs :
- 25 Ω @ 120mA, 0V
- Terminal Form :
- THROUGH-HOLE
- Maximum Operating Temperature :
- +150 °C
- Transistor Application :
- SWITCHING
- Channel Type :
- N Channel
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 400V
- Package Type :
- TO-220
- Element Configuration :
- Single
- Published :
- 2013
- Continuous Drain Current (ID) :
- 500mA
- Product Status :
- Active
- Power Dissipation (Max) :
- 15W (Tc)
- Operating Temperature Classification :
- Military
- Number of Channels :
- 1
- Radiation Hardening :
- No
- Weight :
- 6.000006g
- Polarity :
- N
- Brand :
- Microchip Technology / Atmel
- Mounting Type :
- Through Hole
- Power Dissipation-Max (Abs) :
- 15 W
- Packaging :
- Tube
- RoHS :
- Details
- Rad Hardened :
- No
- Number of Elements per Chip :
- 1
- Drain-Source On-Volt :
- 400(V)
- Type :
- Power MOSFET
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate-Source Voltage (Max) :
- ±20(V)
- Power Dissipation :
- 15W
- Factory Lead Time :
- 5 Weeks
- Turn-Off Delay Time :
- 15 ns
- Operating Temp Range :
- -55C to 150C
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Current - Continuous Drain (Id) @ 25°C :
- 500mA Tj
- Power Dissipation-Max :
- 15W Tc
- Terminal Finish :
- MATTE TIN
- Product Category :
- MOSFET
- Series :
- --
- Width :
- 4.83mm
- Number of Terminations :
- 3
- Turn On Delay Time :
- 10 ns
- FET Feature :
- Depletion Mode
- Fall Time (Typ) :
- 20 ns
- RoHS Status :
- ROHS3 Compliant
- Base Product Number :
- DN2540
- Vgs(th) (Max) @ Id :
- --
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mounting :
- Through Hole
- Operating Mode :
- Depletion Mode
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 25V
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Configuration :
- Single
- Number of Terminals :
- 3
- Number of Pins :
- 3
- Qualification Status :
- Not Qualified
- Supplier Device Package :
- TO-220-3
- JEDEC-95 Code :
- TO-220AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- 1 N-Channel
- Pin Count :
- 3 +Tab
- Drain to Source Breakdown Voltage :
- 400V
- Surface Mount :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Minimum Operating Temperature :
- -55 °C
- Additional Feature :
- LOW THRESHOLD
- MSL :
- -
- FET Type :
- N-Channel
- Transistor Polarity :
- N-Channel
- Channel Mode :
- Depletion
- Case Connection :
- DRAIN
- Polarity/Channel Type :
- N-Channel
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Terminal Position :
- Single
- Height :
- 22.86mm
- Pulsed Drain Current-Max (IDM) :
- 0.5A
- REACH SVHC :
- No SVHC
- Continuous Drain Current :
- 0.5(A)
- JESD-30 Code :
- R-PSFM-T3
- Manufacturer :
- Microchip
- Reach Compliance Code :
- Compliant
- Qualification :
- -
- Continuous Drain Current Id :
- 500
- Length :
- 10.67mm
- HTS Code :
- 8541.29.00.95
- Mounting Style :
- Through Hole
- Threshold Voltage :
- -1.5V
- Package / Case :
- TO-220-3
- Mount :
- Through Hole
- Drain-source On Resistance-Max :
- 25 Ω
- Package :
- Tube
- Datasheets
- DN2540N5-G

N-Channel Tube 25 Ω @ 120mA, 0V ±20V 300pF @ 25V 400V TO-220-3
DN2540N5-G Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 300pF @ 25V.This device conducts a continuous drain current (ID) of 500mA, which is the maximum continuous current transistor can conduct.Using VGS=400V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 400V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.5A.When the device is turned off, a turn-off delay time of 15 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 0.5A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -1.5V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 0V volts (0V).
DN2540N5-G Features
a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 0.5A.
a threshold voltage of -1.5V
a 400V drain to source voltage (Vdss)
DN2540N5-G Applications
There are a lot of Microchip Technology
DN2540N5-G applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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