DN2535N5-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Polarity/Channel Type :

N-Channel

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

0V

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

FET Feature :

Depletion Mode

Continuous Drain Current (ID) :

500mA

Fall Time (Typ) :

20 ns

Factory Lead Time :

5 Weeks

Pulsed Drain Current-Max (IDM) :

0.5A

Pin Count :

3 +Tab

Rds On (Max) @ Id, Vgs :

25 Ω @ 120mA, 0V

Base Product Number :

DN2535

Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 25V

Turn On Delay Time :

10 ns

Terminal Finish :

MATTE TIN

Number of Terminations :

3

Mounting :

Through Hole

Manufacturer :

Microchip

ECCN Code :

EAR99

Channel Type :

N

Package Shape :

RECTANGULAR

Gate-Source Voltage (Max) :

±20(V)

Supplier Device Package :

TO-220-3

Product Status :

Active

Contact Plating :

Tin

Transistor Polarity :

N-Channel

Package / Case :

TO-220-3

Type :

Power MOSFET

Surface Mount :

No

Lead Free :

Lead Free

RoHS :

Details

Power Dissipation-Max (Abs) :

15 W

FET Type :

N-Channel

Packaging :

Tube

Number of Terminals :

3

Package Type :

TO-220

Number of Elements :

1

Element Configuration :

Single

Vgs(th) (Max) @ Id :

--

Drain to Source Breakdown Voltage :

350V

Published :

2008

Minimum Operating Temperature :

- 55 C

Weight :

6.000006g

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

0.5A

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Polarity :

N

Height :

9.02mm

Continuous Drain Current Id :

500

Length :

10.67mm

Brand :

Microchip Technology / Atmel

Additional Feature :

LOW THRESHOLD

Width :

4.83mm

Continuous Drain Current :

0.5(A)

Drain-source On Resistance-Max :

25 Ω

Power Dissipation (Max) :

15W (Tc)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature Classification :

Military

Package :

Tube

JESD-609 Code :

e3

Transistor Type :

1 N-Channel

Rise Time :

15ns

Channel Mode :

Depletion

Power Dissipation :

15W

JESD-30 Code :

R-PSFM-T3

Rad Hardened :

No

Number of Pins :

3

Terminal Form :

THROUGH-HOLE

Reach Compliance Code :

Compliant

Product Type :

MOSFET

Number of Channels :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Maximum Operating Temperature :

+ 150 C

Power Dissipation-Max :

15W Tc

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temp Range :

-55C to 150C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn-Off Delay Time :

15 ns

Drain-Source On-Volt :

350(V)

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Product Category :

MOSFET

Series :

--

Operating Mode :

Depletion Mode

Mounting Style :

Through Hole

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

500mA Tj

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

350V

Mounting Type :

Through Hole