DN2535N5-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Number of Channels :

1

Number of Elements :

1

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

0.5A

Brand :

Microchip Technology / Atmel

FET Feature :

Depletion Mode

Product Type :

MOSFET

Operating Mode :

Depletion Mode

Drain Current-Max (Abs) (ID) :

0.5A

Drive Voltage (Max Rds On,Min Rds On) :

0V

Power Dissipation (Max) :

15W (Tc)

Mounting Type :

Through Hole

Lead Free :

Lead Free

Type :

Power MOSFET

Qualification Status :

Not Qualified

Operating Temperature Classification :

Military

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

15ns

Package / Case :

TO-220-3

Surface Mount :

No

Configuration :

Single

Minimum Operating Temperature :

- 55 C

Transistor Polarity :

N-Channel

Weight :

6.000006g

Power Dissipation-Max (Abs) :

15 W

Product Status :

Active

Operating Temp Range :

-55C to 150C

Current - Continuous Drain (Id) @ 25°C :

500mA Tj

Mount :

Through Hole

REACH SVHC :

No SVHC

JESD-30 Code :

R-PSFM-T3

Product Category :

MOSFET

Transistor Application :

SWITCHING

Height :

9.02mm

Packaging :

Tube

Transistor Type :

1 N-Channel

JEDEC-95 Code :

TO-220AB

Factory Lead Time :

5 Weeks

Package Type :

TO-220

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Turn On Delay Time :

10 ns

Terminal Position :

Single

Channel Mode :

Depletion

RoHS :

Details

Drain-Source On-Volt :

350(V)

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 25V

Series :

--

Power Dissipation :

15W

Pin Count :

3 +Tab

Package Shape :

RECTANGULAR

Polarity :

N

Width :

4.83mm

Continuous Drain Current (ID) :

500mA

Manufacturer :

Microchip

Fall Time (Typ) :

20 ns

Reach Compliance Code :

Compliant

Terminal Finish :

MATTE TIN

Additional Feature :

LOW THRESHOLD

Maximum Operating Temperature :

+ 150 C

Vgs(th) (Max) @ Id :

--

Terminal Form :

THROUGH-HOLE

Package :

Tube

Base Product Number :

DN2535

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current Id :

500

Continuous Drain Current :

0.5(A)

Mounting Style :

Through Hole

Polarity/Channel Type :

N-Channel

Published :

2008

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Number of Pins :

3

Turn-Off Delay Time :

15 ns

Mounting :

Through Hole

Length :

10.67mm

Gate-Source Voltage (Max) :

±20(V)

Drain to Source Breakdown Voltage :

350V

Supplier Device Package :

TO-220-3

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Number of Terminals :

3

Contact Plating :

Tin

Rad Hardened :

No

Number of Terminations :

3

Drain-source On Resistance-Max :

25 Ω

JESD-609 Code :

e3

Channel Type :

N

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

25 Ω @ 120mA, 0V

Drain to Source Voltage (Vdss) :

350V

Power Dissipation-Max :

15W Tc