DN2535N5-G

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Mfr.Part #
DN2535N5-G
Manufacturer
Microchip Technology
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 350V 500MA TO220-3
Stock
5,203
In Stock :
5,203

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Surface Mount :
No
Mounting Type :
Through Hole
Height :
9.02mm
JEDEC-95 Code :
TO-220AB
Case Connection :
DRAIN
Qualification Status :
Not Qualified
Number of Terminations :
3
Length :
10.67mm
Polarity :
N
Pulsed Drain Current-Max (IDM) :
0.5A
Power Dissipation (Max) :
15W (Tc)
Mounting :
Through Hole
Published :
2008
FET Feature :
Depletion Mode
Transistor Polarity :
N-Channel
Gate to Source Voltage (Vgs) :
20V
Continuous Drain Current (ID) :
500mA
Rad Hardened :
No
Product Category :
MOSFET
Factory Lead Time :
5 Weeks
Rise Time :
15ns
JESD-30 Code :
R-PSFM-T3
Additional Feature :
LOW THRESHOLD
Reach Compliance Code :
Compliant
Rds On (Max) @ Id, Vgs :
25 Ω @ 120mA, 0V
Supplier Device Package :
TO-220-3
Mounting Style :
Through Hole
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Drive Voltage (Max Rds On,Min Rds On) :
0V
Brand :
Microchip Technology / Atmel
Drain-Source On-Volt :
350(V)
Minimum Operating Temperature :
- 55 C
Drain Current-Max (Abs) (ID) :
0.5A
Operating Temperature Classification :
Military
Power Dissipation-Max :
15W Tc
Drain to Source Voltage (Vdss) :
350V
Series :
--
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Maximum Operating Temperature :
+ 150 C
Terminal Form :
THROUGH-HOLE
Contact Plating :
Tin
Continuous Drain Current :
0.5(A)
FET Type :
N-Channel
Number of Channels :
1
Configuration :
Single
Gate-Source Voltage (Max) :
±20(V)
Transistor Application :
SWITCHING
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Temp Range :
-55C to 150C
Turn On Delay Time :
10 ns
Package Shape :
RECTANGULAR
Polarity/Channel Type :
N-Channel
Channel Type :
N
Drain to Source Breakdown Voltage :
350V
Turn-Off Delay Time :
15 ns
Power Dissipation :
15W
Number of Pins :
3
ECCN Code :
EAR99
Weight :
6.000006g
Product Status :
Active
REACH SVHC :
No SVHC
Terminal Position :
Single
Manufacturer :
Microchip
Product Type :
MOSFET
Package Type :
TO-220
Type :
Power MOSFET
Mount :
Through Hole
Pin Count :
3 +Tab
Input Capacitance (Ciss) (Max) @ Vds :
300pF @ 25V
Operating Mode :
Depletion Mode
Drain-source On Resistance-Max :
25 Ω
Fall Time (Typ) :
20 ns
Channel Mode :
Depletion
RoHS :
Details
Vgs(th) (Max) @ Id :
--
Base Product Number :
DN2535
Vgs (Max) :
±20V
Transistor Type :
1 N-Channel
Current - Continuous Drain (Id) @ 25°C :
500mA Tj
Continuous Drain Current Id :
500
Transistor Element Material :
SILICON
Width :
4.83mm
Terminal Finish :
MATTE TIN
JESD-609 Code :
e3
Number of Terminals :
3
Package :
Tube
Element Configuration :
Single
Operating Temperature :
-55°C~150°C TJ
Package / Case :
TO-220-3
Lead Free :
Lead Free
Power Dissipation-Max (Abs) :
15 W
Datasheets
DN2535N5-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN2535N5-G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Number of Channels:1, Number of Pins:3, Type:Power MOSFET, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, DN2535N5-G pinout, DN2535N5-G datasheet PDF, DN2535N5-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN2535N5-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN2535N5-G


N-Channel Tube 25 Ω @ 120mA, 0V ±20V 300pF @ 25V 350V TO-220-3

DN2535N5-G Overview


A device's maximal input capacitance is 300pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 500mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 350V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.5A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 15 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 0.5A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 350V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (0V).

DN2535N5-G Features


a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 350V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 0.5A.
a 350V drain to source voltage (Vdss)


DN2535N5-G Applications


There are a lot of Microchip Technology
DN2535N5-G applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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