DN2535N5-G
- Mfr.Part #
- DN2535N5-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 350V 500MA TO220-3
- Stock
- 5,203
- In Stock :
- 5,203
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- No
- Mounting Type :
- Through Hole
- Height :
- 9.02mm
- JEDEC-95 Code :
- TO-220AB
- Case Connection :
- DRAIN
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- Length :
- 10.67mm
- Polarity :
- N
- Pulsed Drain Current-Max (IDM) :
- 0.5A
- Power Dissipation (Max) :
- 15W (Tc)
- Mounting :
- Through Hole
- Published :
- 2008
- FET Feature :
- Depletion Mode
- Transistor Polarity :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 500mA
- Rad Hardened :
- No
- Product Category :
- MOSFET
- Factory Lead Time :
- 5 Weeks
- Rise Time :
- 15ns
- JESD-30 Code :
- R-PSFM-T3
- Additional Feature :
- LOW THRESHOLD
- Reach Compliance Code :
- Compliant
- Rds On (Max) @ Id, Vgs :
- 25 Ω @ 120mA, 0V
- Supplier Device Package :
- TO-220-3
- Mounting Style :
- Through Hole
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Brand :
- Microchip Technology / Atmel
- Drain-Source On-Volt :
- 350(V)
- Minimum Operating Temperature :
- - 55 C
- Drain Current-Max (Abs) (ID) :
- 0.5A
- Operating Temperature Classification :
- Military
- Power Dissipation-Max :
- 15W Tc
- Drain to Source Voltage (Vdss) :
- 350V
- Series :
- --
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Maximum Operating Temperature :
- + 150 C
- Terminal Form :
- THROUGH-HOLE
- Contact Plating :
- Tin
- Continuous Drain Current :
- 0.5(A)
- FET Type :
- N-Channel
- Number of Channels :
- 1
- Configuration :
- Single
- Gate-Source Voltage (Max) :
- ±20(V)
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temp Range :
- -55C to 150C
- Turn On Delay Time :
- 10 ns
- Package Shape :
- RECTANGULAR
- Polarity/Channel Type :
- N-Channel
- Channel Type :
- N
- Drain to Source Breakdown Voltage :
- 350V
- Turn-Off Delay Time :
- 15 ns
- Power Dissipation :
- 15W
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Weight :
- 6.000006g
- Product Status :
- Active
- REACH SVHC :
- No SVHC
- Terminal Position :
- Single
- Manufacturer :
- Microchip
- Product Type :
- MOSFET
- Package Type :
- TO-220
- Type :
- Power MOSFET
- Mount :
- Through Hole
- Pin Count :
- 3 +Tab
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 25V
- Operating Mode :
- Depletion Mode
- Drain-source On Resistance-Max :
- 25 Ω
- Fall Time (Typ) :
- 20 ns
- Channel Mode :
- Depletion
- RoHS :
- Details
- Vgs(th) (Max) @ Id :
- --
- Base Product Number :
- DN2535
- Vgs (Max) :
- ±20V
- Transistor Type :
- 1 N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 500mA Tj
- Continuous Drain Current Id :
- 500
- Transistor Element Material :
- SILICON
- Width :
- 4.83mm
- Terminal Finish :
- MATTE TIN
- JESD-609 Code :
- e3
- Number of Terminals :
- 3
- Package :
- Tube
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-220-3
- Lead Free :
- Lead Free
- Power Dissipation-Max (Abs) :
- 15 W
- Datasheets
- DN2535N5-G

N-Channel Tube 25 Ω @ 120mA, 0V ±20V 300pF @ 25V 350V TO-220-3
DN2535N5-G Overview
A device's maximal input capacitance is 300pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 500mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 350V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.5A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 15 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 0.5A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 350V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (0V).
DN2535N5-G Features
a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 350V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 0.5A.
a 350V drain to source voltage (Vdss)
DN2535N5-G Applications
There are a lot of Microchip Technology
DN2535N5-G applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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