DN2535N5-G
- Mfr.Part #
- DN2535N5-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 350V 500MA TO220-3
- Stock
- 5,203
- In Stock :
- 5,203
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Status :
- Active
- RoHS :
- Details
- Continuous Drain Current (ID) :
- 500mA
- Package / Case :
- TO-220-3
- Product Category :
- MOSFET
- Mounting :
- Through Hole
- Height :
- 9.02mm
- Package :
- Tube
- Channel Mode :
- Depletion
- Power Dissipation-Max (Abs) :
- 15 W
- Continuous Drain Current Id :
- 500
- Width :
- 4.83mm
- Number of Pins :
- 3
- Fall Time (Typ) :
- 20 ns
- Terminal Position :
- Single
- Package Shape :
- RECTANGULAR
- ECCN Code :
- EAR99
- Rise Time :
- 15ns
- Packaging :
- Tube
- Terminal Form :
- THROUGH-HOLE
- Terminal Finish :
- MATTE TIN
- Rds On (Max) @ Id, Vgs :
- 25 Ω @ 120mA, 0V
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 25V
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- --
- Contact Plating :
- Tin
- Mounting Type :
- Through Hole
- Maximum Operating Temperature :
- + 150 C
- Operating Temperature Classification :
- Military
- Transistor Application :
- SWITCHING
- Drain Current-Max (Abs) (ID) :
- 0.5A
- Qualification Status :
- Not Qualified
- Continuous Drain Current :
- 0.5(A)
- Minimum Operating Temperature :
- - 55 C
- Pin Count :
- 3 +Tab
- Operating Mode :
- Depletion Mode
- Current - Continuous Drain (Id) @ 25°C :
- 500mA Tj
- Power Dissipation-Max :
- 15W Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Style :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Supplier Device Package :
- TO-220-3
- Number of Channels :
- 1
- Configuration :
- Single
- Power Dissipation (Max) :
- 15W (Tc)
- JESD-609 Code :
- e3
- Transistor Polarity :
- N-Channel
- Length :
- 10.67mm
- Channel Type :
- N
- JEDEC-95 Code :
- TO-220AB
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 350V
- Number of Terminals :
- 3
- Polarity :
- N
- Product Type :
- MOSFET
- Rad Hardened :
- No
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- No
- Gate-Source Voltage (Max) :
- ±20(V)
- Manufacturer :
- Microchip
- Series :
- --
- Type :
- Power MOSFET
- Reach Compliance Code :
- Compliant
- Brand :
- Microchip Technology / Atmel
- Operating Temp Range :
- -55C to 150C
- FET Type :
- N-Channel
- Polarity/Channel Type :
- N-Channel
- Base Product Number :
- DN2535
- Drain to Source Voltage (Vdss) :
- 350V
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Factory Lead Time :
- 5 Weeks
- Turn-Off Delay Time :
- 15 ns
- Mount :
- Through Hole
- JESD-30 Code :
- R-PSFM-T3
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Turn On Delay Time :
- 10 ns
- Pulsed Drain Current-Max (IDM) :
- 0.5A
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2008
- FET Feature :
- Depletion Mode
- Package Type :
- TO-220
- Power Dissipation :
- 15W
- Weight :
- 6.000006g
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 25 Ω
- Transistor Type :
- 1 N-Channel
- Drain-Source On-Volt :
- 350(V)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Additional Feature :
- LOW THRESHOLD
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±20V
- Datasheets
- DN2535N5-G

N-Channel Tube 25 Ω @ 120mA, 0V ±20V 300pF @ 25V 350V TO-220-3
DN2535N5-G Overview
A device's maximal input capacitance is 300pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 500mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 350V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.5A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 15 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 0.5A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 350V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (0V).
DN2535N5-G Features
a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 350V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 0.5A.
a 350V drain to source voltage (Vdss)
DN2535N5-G Applications
There are a lot of Microchip Technology
DN2535N5-G applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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