DN2535N5-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Product Status :

Active

RoHS :

Details

Continuous Drain Current (ID) :

500mA

Package / Case :

TO-220-3

Product Category :

MOSFET

Mounting :

Through Hole

Height :

9.02mm

Package :

Tube

Channel Mode :

Depletion

Power Dissipation-Max (Abs) :

15 W

Continuous Drain Current Id :

500

Width :

4.83mm

Number of Pins :

3

Fall Time (Typ) :

20 ns

Terminal Position :

Single

Package Shape :

RECTANGULAR

ECCN Code :

EAR99

Rise Time :

15ns

Packaging :

Tube

Terminal Form :

THROUGH-HOLE

Terminal Finish :

MATTE TIN

Rds On (Max) @ Id, Vgs :

25 Ω @ 120mA, 0V

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 25V

Number of Terminations :

3

Vgs(th) (Max) @ Id :

--

Contact Plating :

Tin

Mounting Type :

Through Hole

Maximum Operating Temperature :

+ 150 C

Operating Temperature Classification :

Military

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

0.5A

Qualification Status :

Not Qualified

Continuous Drain Current :

0.5(A)

Minimum Operating Temperature :

- 55 C

Pin Count :

3 +Tab

Operating Mode :

Depletion Mode

Current - Continuous Drain (Id) @ 25°C :

500mA Tj

Power Dissipation-Max :

15W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Style :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

0V

Supplier Device Package :

TO-220-3

Number of Channels :

1

Configuration :

Single

Power Dissipation (Max) :

15W (Tc)

JESD-609 Code :

e3

Transistor Polarity :

N-Channel

Length :

10.67mm

Channel Type :

N

JEDEC-95 Code :

TO-220AB

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

350V

Number of Terminals :

3

Polarity :

N

Product Type :

MOSFET

Rad Hardened :

No

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Surface Mount :

No

Gate-Source Voltage (Max) :

±20(V)

Manufacturer :

Microchip

Series :

--

Type :

Power MOSFET

Reach Compliance Code :

Compliant

Brand :

Microchip Technology / Atmel

Operating Temp Range :

-55C to 150C

FET Type :

N-Channel

Polarity/Channel Type :

N-Channel

Base Product Number :

DN2535

Drain to Source Voltage (Vdss) :

350V

Lead Free :

Lead Free

Element Configuration :

Single

Factory Lead Time :

5 Weeks

Turn-Off Delay Time :

15 ns

Mount :

Through Hole

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Case Connection :

DRAIN

Turn On Delay Time :

10 ns

Pulsed Drain Current-Max (IDM) :

0.5A

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2008

FET Feature :

Depletion Mode

Package Type :

TO-220

Power Dissipation :

15W

Weight :

6.000006g

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

25 Ω

Transistor Type :

1 N-Channel

Drain-Source On-Volt :

350(V)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Additional Feature :

LOW THRESHOLD

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V