DN2540N3-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

Microchip

Polarity/Channel Type :

N-Channel

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

--

RoHS Status :

ROHS3 Compliant

Number of Elements per Chip :

1

Continuous Drain Current :

0.12(A)

Channel Mode :

Depletion

Continuous Drain Current Id :

120

Height :

5.33mm

Power Dissipation :

1W

RoHS :

Details

Package :

Bag

MSL :

-

Weight :

453.59237mg

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Operating Mode :

Depletion Mode

Surface Mount :

No

Length :

5.21mm

Polarity :

N

Brand :

Microchip Technology / Atmel

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

ECCN Code :

EAR99

Number of Terminals :

3

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

DS Breakdown Voltage-Min :

400 V

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

400V

Power Dissipation-Max :

1W Tc

Supplier Device Package :

TO-92 (TO-226)

Gate-Source Voltage (Max) :

±20(V)

Pin Count :

3

Additional Feature :

HIGH INPUT IMPEDANCE

Qualification Status :

Not Qualified

Drain-Source On-Volt :

400(V)

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

25 Ω

Package Shape :

Round

Mounting Style :

Through Hole

Mounting Type :

Through Hole

Rise Time :

15ns

Packaging :

Bulk

Product Category :

MOSFET

JEDEC-95 Code :

TO-92

Reach Compliance Code :

Compliant

Continuous Drain Current (ID) :

120mA

FET Feature :

Depletion Mode

Qualification :

-

REACH SVHC :

No SVHC

Transistor Polarity :

N-Channel

Terminal Form :

Wire

Channel Type :

N

Rad Hardened :

No

Number of Pins :

3

Power Dissipation (Max) :

1W (Tc)

Lead Free :

Lead Free

Transistor Type :

1 N-Channel

Mounting :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

120mA Tj

Base Product Number :

DN2540

Rds On (Max) @ Id, Vgs :

25 Ω @ 120mA, 0V

Turn On Delay Time :

10 ns

Feedback Cap-Max (Crss) :

5 pF

Terminal Position :

BOTTOM

Drain to Source Breakdown Voltage :

400V

FET Type :

N-Channel

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 25V

Number of Channels :

1

Width :

4.19mm

Mount :

Through Hole

Published :

2013

Turn-Off Delay Time :

15 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drive Voltage (Max Rds On,Min Rds On) :

0V

Product Type :

MOSFET

Package Type :

TO-92

Transistor Application :

SWITCHING

JESD-30 Code :

O-PBCY-W3

JESD-609 Code :

e3

Operating Temp Range :

-55C to 150C

Power Dissipation-Max (Abs) :

1 W

Type :

Power MOSFET

Fall Time (Typ) :

20 ns

Factory Lead Time :

5 Weeks

Minimum Operating Temperature :

-55 °C

Maximum Operating Temperature :

+150 °C

Operating Temperature Classification :

Military

Configuration :

Single

Peak Reflow Temperature (Cel) :

Not Applicable

Product Status :

Active

Series :

--

Moisture Sensitivity Level (MSL) :

1 (Unlimited)