DN2530N3-G

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Mfr.Part #
DN2530N3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET N-CH 300V 175MA TO92
Stock
549
In Stock :
549

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminals :
3
Number of Terminations :
3
Mount :
Through Hole
Product Status :
Active
JEDEC-95 Code :
TO-92
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
Not Applicable
Drain to Source Voltage (Vdss) :
300V
Mounting Style :
Through Hole
Width :
4.19mm
Channel Type :
N
Terminal Finish :
Matte Tin (Sn)
Surface Mount :
No
HTS Code :
8541.21.00.95
Series :
--
Drain-source On Resistance-Max :
12 Ω
Element Configuration :
Single
Number of Pins :
3
ECCN Code :
EAR99
Drain to Source Breakdown Voltage :
300V
Continuous Drain Current Id :
175
Weight :
453.59237mg
Power Dissipation (Max) :
740mW (Ta)
Maximum Operating Temperature :
+150 °C
Input Capacitance (Ciss) (Max) @ Vds :
300pF @ 25V
Product Category :
MOSFET
Length :
5.21mm
MSL :
-
Power Dissipation-Max :
740mW Ta
Reach Compliance Code :
Compliant
Pin Count :
3
Operating Mode :
Depletion Mode
Transistor Polarity :
N-Channel
FET Feature :
Depletion Mode
Rise Time :
15ns
Qualification Status :
Not Qualified
Continuous Drain Current (ID) :
175mA
Supplier Device Package :
TO-92 (TO-226)
Drive Voltage (Max Rds On,Min Rds On) :
0V
Number of Channels :
1
JESD-609 Code :
e3
Vgs(th) (Max) @ Id :
--
Package :
Bag
Product :
MOSFET Small Signal
Rds On (Max) @ Id, Vgs :
12 Ω @ 150mA, 0V
Radiation Hardening :
No
Operating Temperature :
-55°C~150°C TJ
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Application :
SWITCHING
Transistor Type :
1 N-Channel
Power Dissipation :
740mW
Gate to Source Voltage (Vgs) :
20V
Type :
FET
Transistor Element Material :
SILICON
REACH SVHC :
No SVHC
Polarity/Channel Type :
N-Channel
Product Type :
MOSFET
Channel Mode :
Depletion
Current - Continuous Drain (Id) @ 25°C :
175mA Tj
Package Shape :
Round
Configuration :
Single
FET Type :
N-Channel
Published :
2013
Number of Elements :
1
JESD-30 Code :
O-PBCY-W3
Power Dissipation-Max (Abs) :
0.74 W
Lead Free :
Lead Free
Terminal Position :
BOTTOM
Height :
5.33mm
Manufacturer :
Microchip
Qualification :
-
Mounting Type :
Through Hole
Feedback Cap-Max (Crss) :
5 pF
Base Product Number :
DN2530
Factory Lead Time :
6 Weeks
Fall Time (Typ) :
15 ns
Brand :
Microchip Technology / Atmel
DS Breakdown Voltage-Min :
300 V
Terminal Form :
Wire
Packaging :
Bulk
RoHS :
Details
Number of Elements per Chip :
1
Turn-Off Delay Time :
15 ns
Turn On Delay Time :
10 ns
Package Type :
TO-92
Minimum Operating Temperature :
-55 °C
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Vgs (Max) :
±20V
Datasheets
DN2530N3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN2530N3-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Type:FET, Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA), DN2530N3-G pinout, DN2530N3-G datasheet PDF, DN2530N3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN2530N3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN2530N3-G


N-Channel Bulk 12 Ω @ 150mA, 0V ±20V 300pF @ 25V 300V TO-226-3, TO-92-3 (TO-226AA)

DN2530N3-G Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 300pF @ 25V.This device has a continuous drain current (ID) of [175mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=300V, the drain-source breakdown voltage is 300V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 15 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 300 V.In order to operate this transistor, a voltage of 300V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (0V).

DN2530N3-G Features


a continuous drain current (ID) of 175mA
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 15 ns
a 300V drain to source voltage (Vdss)


DN2530N3-G Applications


There are a lot of Microchip Technology
DN2530N3-G applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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