DN2530N3-G
- Mfr.Part #
- DN2530N3-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 175MA TO92
- Stock
- 549
- In Stock :
- 549
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminals :
- 3
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Product Status :
- Active
- JEDEC-95 Code :
- TO-92
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Drain to Source Voltage (Vdss) :
- 300V
- Mounting Style :
- Through Hole
- Width :
- 4.19mm
- Channel Type :
- N
- Terminal Finish :
- Matte Tin (Sn)
- Surface Mount :
- No
- HTS Code :
- 8541.21.00.95
- Series :
- --
- Drain-source On Resistance-Max :
- 12 Ω
- Element Configuration :
- Single
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 300V
- Continuous Drain Current Id :
- 175
- Weight :
- 453.59237mg
- Power Dissipation (Max) :
- 740mW (Ta)
- Maximum Operating Temperature :
- +150 °C
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 25V
- Product Category :
- MOSFET
- Length :
- 5.21mm
- MSL :
- -
- Power Dissipation-Max :
- 740mW Ta
- Reach Compliance Code :
- Compliant
- Pin Count :
- 3
- Operating Mode :
- Depletion Mode
- Transistor Polarity :
- N-Channel
- FET Feature :
- Depletion Mode
- Rise Time :
- 15ns
- Qualification Status :
- Not Qualified
- Continuous Drain Current (ID) :
- 175mA
- Supplier Device Package :
- TO-92 (TO-226)
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Number of Channels :
- 1
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- --
- Package :
- Bag
- Product :
- MOSFET Small Signal
- Rds On (Max) @ Id, Vgs :
- 12 Ω @ 150mA, 0V
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Application :
- SWITCHING
- Transistor Type :
- 1 N-Channel
- Power Dissipation :
- 740mW
- Gate to Source Voltage (Vgs) :
- 20V
- Type :
- FET
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- N-Channel
- Product Type :
- MOSFET
- Channel Mode :
- Depletion
- Current - Continuous Drain (Id) @ 25°C :
- 175mA Tj
- Package Shape :
- Round
- Configuration :
- Single
- FET Type :
- N-Channel
- Published :
- 2013
- Number of Elements :
- 1
- JESD-30 Code :
- O-PBCY-W3
- Power Dissipation-Max (Abs) :
- 0.74 W
- Lead Free :
- Lead Free
- Terminal Position :
- BOTTOM
- Height :
- 5.33mm
- Manufacturer :
- Microchip
- Qualification :
- -
- Mounting Type :
- Through Hole
- Feedback Cap-Max (Crss) :
- 5 pF
- Base Product Number :
- DN2530
- Factory Lead Time :
- 6 Weeks
- Fall Time (Typ) :
- 15 ns
- Brand :
- Microchip Technology / Atmel
- DS Breakdown Voltage-Min :
- 300 V
- Terminal Form :
- Wire
- Packaging :
- Bulk
- RoHS :
- Details
- Number of Elements per Chip :
- 1
- Turn-Off Delay Time :
- 15 ns
- Turn On Delay Time :
- 10 ns
- Package Type :
- TO-92
- Minimum Operating Temperature :
- -55 °C
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Vgs (Max) :
- ±20V
- Datasheets
- DN2530N3-G
,TO-226_straightlead.jpg)
N-Channel Bulk 12 Ω @ 150mA, 0V ±20V 300pF @ 25V 300V TO-226-3, TO-92-3 (TO-226AA)
DN2530N3-G Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 300pF @ 25V.This device has a continuous drain current (ID) of [175mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=300V, the drain-source breakdown voltage is 300V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 15 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 300 V.In order to operate this transistor, a voltage of 300V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (0V).
DN2530N3-G Features
a continuous drain current (ID) of 175mA
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 15 ns
a 300V drain to source voltage (Vdss)
DN2530N3-G Applications
There are a lot of Microchip Technology
DN2530N3-G applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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