DN2535N3-G-P013

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

O-PBCY-T3

Supplier Device Package :

TO-92 (TO-226)

Power Dissipation (Max) :

1W (Tc)

Package :

Tape and Box (TB)

Mounting Style :

Through Hole

Mounting Type :

Through Hole

Number of Elements :

1

Vgs(th) (Max) @ Id :

--

Drain to Source Breakdown Voltage :

350V

Continuous Drain Current Id :

0.12

Package Shape :

Round

Surface Mount :

No

ECCN Code :

EAR99

Weight :

453.59237mg

Current - Continuous Drain (Id) @ 25°C :

120mA Tj

Channel Type :

N

Terminal Position :

BOTTOM

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 25V

Continuous Drain Current (ID) :

120mA

Product Status :

Active

FET Type :

N-Channel

Number of Terminations :

3

Number of Channels :

1

Series :

--

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Category :

MOSFET

Transistor Application :

SWITCHING

Factory Lead Time :

5 Weeks

Operating Mode :

Depletion Mode

Feedback Cap-Max (Crss) :

5 pF

Brand :

Microchip Technology

Drain to Source Voltage (Vdss) :

350V

Vgs (Max) :

±20V

Polarity/Channel Type :

N-Channel

Product Type :

MOSFET

Reach Compliance Code :

Compliant

Manufacturer :

Microchip

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

0V

JEDEC-95 Code :

TO-92

Number of Terminals :

3

FET Feature :

Depletion Mode

Power Dissipation-Max :

1W Tc

Operating Temperature :

-55°C~150°C TJ

Published :

2013

Terminal Form :

THROUGH-HOLE

Rds On (Max) @ Id, Vgs :

25 Ω @ 120mA, 0V

RoHS :

Details

Transistor Type :

1 N-Channel

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Polarity :

N-Channel

Base Product Number :

DN2535

Configuration :

SINGLE WITH BUILT-IN DIODE

Subcategory :

MOSFETs

Drain-source On Resistance-Max :

25 Ω

Transistor Element Material :

SILICON

Packaging :

Tape and Box (TB)

Mount :

Through Hole