DN0150BDJ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Collector Current :

100mA

Polarity :

NPN

Transition Frequency :

60MHz

Length :

1mm

Operating Temperature :

-55°C~150°C TJ

Published :

2009

Max Breakdown Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

40

Max Power Dissipation :

300mW

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Number of Pins :

6

Packaging :

Tape and Reel (TR)

Power - Max :

300mW

Pbfree Code :

yes

Transistor Type :

2 NPN (Dual)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

50V

Factory Lead Time :

8 Weeks

REACH SVHC :

No SVHC

Collector Base Voltage (VCBO) :

60V

Element Configuration :

Dual

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Gain Bandwidth Product :

60MHz

Width :

800μm

Terminal Form :

Flat

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Emitter Base Voltage (VEBO) :

5V

Pin Count :

6

Current - Collector Cutoff (Max) :

100nA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 6V

Height :

450μm

Package / Case :

SOT-963

Number of Terminations :

6

Collector Emitter Breakdown Voltage :

50V

Number of Elements :

2

Transistor Element Material :

SILICON

JESD-609 Code :

e3