DN0150BDJ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

REACH SVHC :

No SVHC

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

40

Collector Base Voltage (VCBO) :

60V

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 6V

Peak Reflow Temperature (Cel) :

260

Gain Bandwidth Product :

60MHz

Width :

800μm

Published :

2009

Package / Case :

SOT-963

Pin Count :

6

Transition Frequency :

60MHz

Radiation Hardening :

No

Max Power Dissipation :

300mW

Terminal Finish :

Matte Tin (Sn)

Factory Lead Time :

8 Weeks

Collector Emitter Voltage (VCEO) :

50V

Number of Elements :

2

Collector Emitter Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Current - Collector Cutoff (Max) :

100nA ICBO

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Power - Max :

300mW

Height :

450μm

Pbfree Code :

yes

JESD-609 Code :

e3

Length :

1mm

Polarity :

NPN

Mounting Type :

Surface Mount

Number of Terminations :

6

Terminal Form :

Flat

Transistor Element Material :

SILICON

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Transistor Type :

2 NPN (Dual)

Max Collector Current :

100mA

Emitter Base Voltage (VEBO) :

5V