DN0150BDJ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Published :

2009

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Base Voltage (VCBO) :

60V

Mount :

Surface Mount

Factory Lead Time :

8 Weeks

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Emitter Base Voltage (VEBO) :

5V

Length :

1mm

Collector Emitter Voltage (VCEO) :

50V

Max Power Dissipation :

300mW

Number of Elements :

2

Number of Pins :

6

Collector Emitter Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Gain Bandwidth Product :

60MHz

Transistor Type :

2 NPN (Dual)

Peak Reflow Temperature (Cel) :

260

Power - Max :

300mW

Pin Count :

6

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Max Collector Current :

100mA

Transistor Element Material :

SILICON

Radiation Hardening :

No

Polarity :

NPN

Max Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Terminal Finish :

Matte Tin (Sn)

Width :

800μm

Element Configuration :

Dual

JESD-609 Code :

e3

Package / Case :

SOT-963

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 6V

Transition Frequency :

60MHz

Packaging :

Tape and Reel (TR)

Terminal Form :

Flat

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

6

Height :

450μm