DN0150BDJ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Dual

Collector Emitter Breakdown Voltage :

50V

Mount :

Surface Mount

Collector Base Voltage (VCBO) :

60V

Terminal Form :

Flat

Transistor Element Material :

SILICON

Factory Lead Time :

8 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Radiation Hardening :

No

Max Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 6V

Mounting Type :

Surface Mount

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Voltage (VCEO) :

50V

Polarity :

NPN

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

40

Length :

1mm

Width :

800μm

Max Power Dissipation :

300mW

Gain Bandwidth Product :

60MHz

REACH SVHC :

No SVHC

Max Collector Current :

100mA

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Height :

450μm

Transition Frequency :

60MHz

Pin Count :

6

Current - Collector Cutoff (Max) :

100nA ICBO

Published :

2009

Transistor Type :

2 NPN (Dual)

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Power - Max :

300mW

Pbfree Code :

yes

Package / Case :

SOT-963