DN0150BLP4-7B
- Mfr.Part #
- DN0150BLP4-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A 3DFN
- Stock
- 4,706
- In Stock :
- 4,706
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 50V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Position :
- BOTTOM
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 60V
- Package / Case :
- 3-XFDFN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 6V
- Gain Bandwidth Product :
- 60MHz
- Collector Emitter Saturation Voltage :
- 250mV
- Number of Pins :
- 3
- Max Collector Current :
- 100mA
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 450mW
- ECCN Code :
- EAR99
- Base Part Number :
- DN0150
- JESD-609 Code :
- e4
- Operating Temperature :
- -55°C~150°C TJ
- Transition Frequency :
- 60MHz
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Published :
- 2015
- Factory Lead Time :
- 15 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Continuous Collector Current :
- 100mA
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 50V
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Additional Feature :
- High Reliability
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 50V
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- Datasheets
- DN0150BLP4-7B

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount
DN0150BLP4-7B Overview
In this device, the DC current gain is 200 @ 2mA 6V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.A 100mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 60MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
DN0150BLP4-7B Features
the DC current gain for this device is 200 @ 2mA 6V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz
DN0150BLP4-7B Applications
There are a lot of Diodes Incorporated
DN0150BLP4-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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