DN0150BLP4-7B
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- Mfr.Part #
- DN0150BLP4-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A 3DFN
- Stock
- 4,706
- In Stock ：
- 4,706
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Max Breakdown Voltage :
- 50V
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 250mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 50V
- Terminal Position :
- BOTTOM
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- 3-XFDFN
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Transition Frequency :
- 60MHz
- Max Collector Current :
- 100mA
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 5V
- Additional Feature :
- High Reliability
- Radiation Hardening :
- No
- JESD-609 Code :
- e4
- Transistor Element Material :
- SILICON
- Base Part Number :
- DN0150
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 15 Weeks
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Published :
- 2015
- Continuous Collector Current :
- 100mA
- Collector Emitter Breakdown Voltage :
- 50V
- Collector Base Voltage (VCBO) :
- 60V
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 6V
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 60MHz
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 450mW
- Case Connection :
- COLLECTOR
- Transistor Type :
- NPN
- Datasheets
- DN0150BLP4-7B
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount
DN0150BLP4-7B Overview
In this device, the DC current gain is 200 @ 2mA 6V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.A 100mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 60MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
DN0150BLP4-7B Features
the DC current gain for this device is 200 @ 2mA 6V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz
DN0150BLP4-7B Applications
There are a lot of Diodes Incorporated
DN0150BLP4-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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