DN0150BLP4-7B
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- Mfr.Part #
- DN0150BLP4-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A 3DFN
- Stock
- 4,706
- In Stock ：
- 4,706
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Published :
- 2015
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 50V
- Terminal Position :
- BOTTOM
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Mounting Type :
- Surface Mount
- Additional Feature :
- High Reliability
- REACH SVHC :
- No SVHC
- Continuous Collector Current :
- 100mA
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 50V
- Collector Base Voltage (VCBO) :
- 60V
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 15 Weeks
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Transition Frequency :
- 60MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Saturation Voltage :
- 250mV
- Pin Count :
- 3
- Max Collector Current :
- 100mA
- Collector Emitter Voltage (VCEO) :
- 50V
- Base Part Number :
- DN0150
- Gain Bandwidth Product :
- 60MHz
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- 3-XFDFN
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 6V
- JESD-609 Code :
- e4
- Max Power Dissipation :
- 450mW
- Datasheets
- DN0150BLP4-7B
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount
DN0150BLP4-7B Overview
In this device, the DC current gain is 200 @ 2mA 6V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.A 100mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 60MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
DN0150BLP4-7B Features
the DC current gain for this device is 200 @ 2mA 6V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz
DN0150BLP4-7B Applications
There are a lot of Diodes Incorporated
DN0150BLP4-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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