DN0150BLP4-7B
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- Mfr.Part #
- DN0150BLP4-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A 3DFN
- Stock
- 4,706
- In Stock ：
- 4,706
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 60V
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- BOTTOM
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 50V
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 60MHz
- JESD-609 Code :
- e4
- Package / Case :
- 3-XFDFN
- Transistor Type :
- NPN
- Factory Lead Time :
- 15 Weeks
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 50V
- Max Power Dissipation :
- 450mW
- Transition Frequency :
- 60MHz
- ECCN Code :
- EAR99
- Continuous Collector Current :
- 100mA
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Pin Count :
- 3
- Base Part Number :
- DN0150
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Max Collector Current :
- 100mA
- Published :
- 2015
- Additional Feature :
- High Reliability
- Collector Emitter Saturation Voltage :
- 250mV
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 50V
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- NPN
- Datasheets
- DN0150BLP4-7B
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount
DN0150BLP4-7B Overview
In this device, the DC current gain is 200 @ 2mA 6V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.A 100mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 60MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
DN0150BLP4-7B Features
the DC current gain for this device is 200 @ 2mA 6V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz
DN0150BLP4-7B Applications
There are a lot of Diodes Incorporated
DN0150BLP4-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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