DN0150ALP4-7
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- Mfr.Part #
- DN0150ALP4-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A 3DFN
- Stock
- 41,092
- In Stock ：
- 41,092
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 250mV
- Max Power Dissipation :
- 450mW
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 50V
- Pbfree Code :
- yes
- Published :
- 2015
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Continuous Collector Current :
- 100mA
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 50V
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Base Part Number :
- DN0150
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 6V
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Max Collector Current :
- 100mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Element Configuration :
- Single
- Factory Lead Time :
- 15 Weeks
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 60MHz
- Case Connection :
- COLLECTOR
- Max Breakdown Voltage :
- 50V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- NPN
- Package / Case :
- 3-XFDFN
- Gain Bandwidth Product :
- 60MHz
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- High Reliability
- Mount :
- Surface Mount
- JESD-609 Code :
- e4
- Radiation Hardening :
- No
- Datasheets
- DN0150ALP4-7
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount
DN0150ALP4-7B Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 2mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at 100mA in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 60MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
DN0150ALP4-7B Features
the DC current gain for this device is 120 @ 2mA 6V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz
DN0150ALP4-7B Applications
There are a lot of Diodes Incorporated
DN0150ALP4-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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