DN0150ALP4-7
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- Mfr.Part #
- DN0150ALP4-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A 3DFN
- Stock
- 41,092
- In Stock ：
- 41,092
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 100mA
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- JESD-609 Code :
- e4
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pin Count :
- 3
- Case Connection :
- COLLECTOR
- Max Breakdown Voltage :
- 50V
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 250mV
- Published :
- 2015
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 50V
- Additional Feature :
- High Reliability
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Factory Lead Time :
- 15 Weeks
- Base Part Number :
- DN0150
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 60MHz
- Continuous Collector Current :
- 100mA
- Terminal Position :
- BOTTOM
- Number of Terminations :
- 3
- Max Power Dissipation :
- 450mW
- Transition Frequency :
- 60MHz
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 6V
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 50V
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Package / Case :
- 3-XFDFN
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- DN0150ALP4-7
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount
DN0150ALP4-7B Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 2mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at 100mA in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 60MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
DN0150ALP4-7B Features
the DC current gain for this device is 120 @ 2mA 6V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz
DN0150ALP4-7B Applications
There are a lot of Diodes Incorporated
DN0150ALP4-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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