DN0150ALP4-7
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- Mfr.Part #
- DN0150ALP4-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A 3DFN
- Stock
- 41,092
- In Stock ：
- 41,092
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 50V
- JESD-609 Code :
- e4
- Package / Case :
- 3-XFDFN
- Gain Bandwidth Product :
- 60MHz
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 100mA
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Additional Feature :
- High Reliability
- Factory Lead Time :
- 15 Weeks
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Pin Count :
- 3
- Base Part Number :
- DN0150
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 60MHz
- Case Connection :
- COLLECTOR
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 60V
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- BOTTOM
- Published :
- 2015
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 50V
- Collector Emitter Saturation Voltage :
- 250mV
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 50V
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Continuous Collector Current :
- 100mA
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 6V
- Max Power Dissipation :
- 450mW
- Datasheets
- DN0150ALP4-7
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount
DN0150ALP4-7B Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 2mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at 100mA in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 60MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
DN0150ALP4-7B Features
the DC current gain for this device is 120 @ 2mA 6V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz
DN0150ALP4-7B Applications
There are a lot of Diodes Incorporated
DN0150ALP4-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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