DN0150ADJ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

RoHS Status :

ROHS3 Compliant

Element Configuration :

Dual

Length :

1mm

Collector Emitter Voltage (VCEO) :

50V

Transistor Element Material :

SILICON

Radiation Hardening :

No

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Flat

Width :

800μm

Max Breakdown Voltage :

50V

ECCN Code :

EAR99

Published :

2009

Number of Elements :

2

Factory Lead Time :

15 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 2mA 6V

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

JESD-609 Code :

e3

Collector Base Voltage (VCBO) :

60V

Collector Emitter Breakdown Voltage :

50V

Pbfree Code :

yes

Number of Pins :

6

Pin Count :

6

Max Power Dissipation :

300mW

Height :

450μm

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Polarity :

NPN

Base Part Number :

DN0150AD

Number of Terminations :

6

Transition Frequency :

60MHz

Package / Case :

SOT-963

Transistor Type :

2 NPN (Dual)

Current - Collector Cutoff (Max) :

100nA ICBO

Emitter Base Voltage (VEBO) :

5V

Gain Bandwidth Product :

60MHz

Terminal Finish :

Matte Tin (Sn)

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

100mA

Power - Max :

300mW

Time@Peak Reflow Temperature-Max (s) :

40