DN0150ADJ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Height :

450μm

Time@Peak Reflow Temperature-Max (s) :

40

Emitter Base Voltage (VEBO) :

5V

Power - Max :

300mW

Transistor Element Material :

SILICON

Number of Elements :

2

Collector Emitter Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Base Voltage (VCBO) :

60V

Transistor Type :

2 NPN (Dual)

Published :

2009

Element Configuration :

Dual

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Pin Count :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 2mA 6V

Transition Frequency :

60MHz

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

6

Max Collector Current :

100mA

JESD-609 Code :

e3

Pbfree Code :

yes

Factory Lead Time :

15 Weeks

Length :

1mm

Terminal Form :

Flat

Width :

800μm

Base Part Number :

DN0150AD

REACH SVHC :

No SVHC

Collector Emitter Voltage (VCEO) :

50V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Max Breakdown Voltage :

50V

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Polarity :

NPN

Gain Bandwidth Product :

60MHz

Package / Case :

SOT-963

Number of Terminations :

6

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Max Power Dissipation :

300mW

Peak Reflow Temperature (Cel) :

260