DN0150BLP4-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

100nA ICBO

Case Connection :

COLLECTOR

Max Collector Current :

100mA

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 6V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Gain Bandwidth Product :

60MHz

Transistor Type :

NPN

Length :

1mm

Height :

350μm

Transistor Element Material :

SILICON

JESD-609 Code :

e4

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Transition Frequency :

60MHz

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Power - Max :

450mW

ECCN Code :

EAR99

Factory Lead Time :

14 Weeks

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Position :

BOTTOM

Published :

2015

Collector Base Voltage (VCBO) :

60V

Number of Pins :

3

Additional Feature :

High Reliability

Max Breakdown Voltage :

50V

Radiation Hardening :

No

Pbfree Code :

yes

Width :

600μm

Mount :

Surface Mount

Pin Count :

3

Package / Case :

3-XFDFN

Number of Terminations :

3

Max Power Dissipation :

450mW

Collector Emitter Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

50V

REACH SVHC :

No SVHC

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Emitter Base Voltage (VEBO) :

5V

Polarity/Channel Type :

NPN