DMT3020LFDB-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain-source On Resistance-Max :

0.02Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

NO LEAD

Input Capacitance (Ciss) (Max) @ Vds :

393pF @ 15V

Case Connection :

DRAIN

JESD-609 Code :

e4

DS Breakdown Voltage-Min :

30V

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

7.7A

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

FET Type :

2 N-Channel (Dual)

Series :

Automotive, AEC-Q101

Power - Max :

700mW

Rds On (Max) @ Id, Vgs :

20m Ω @ 9A, 10V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

2

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

JESD-30 Code :

S-PDSO-N6

Drain to Source Voltage (Vdss) :

30V

Package / Case :

6-UDFN Exposed Pad

Published :

2016

Mount :

Surface Mount

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

700mW

FET Feature :

Standard

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

23 Weeks

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V