DMT3020LFDB-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain-source On Resistance-Max :

0.02Ohm

JESD-609 Code :

e4

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Published :

2016

JESD-30 Code :

S-PDSO-N6

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Transistor Application :

SWITCHING

Series :

Automotive, AEC-Q101

Terminal Form :

NO LEAD

DS Breakdown Voltage-Min :

30V

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

3V @ 250µA

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

20m Ω @ 9A, 10V

FET Type :

2 N-Channel (Dual)

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Power - Max :

700mW

Input Capacitance (Ciss) (Max) @ Vds :

393pF @ 15V

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Power Dissipation :

700mW

Factory Lead Time :

23 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

7.7A

Mounting Type :

Surface Mount

Package / Case :

6-UDFN Exposed Pad

FET Feature :

Standard

Number of Elements :

2

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

30V