DMT3006LFG-13

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Mfr.Part #
DMT3006LFG-13
Manufacturer
Diodes Incorporated
Package / Case
8-PowerVDFN
Datasheet
Download
Description
MOSFET N-CH 30V PWRDI3333
Stock
43,409
In Stock :
43,409

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
Automotive, AEC-Q101
Continuous Drain Current (ID) :
55.6A
Current - Continuous Drain (Id) @ 25°C :
16A Ta 55.6A Tc
Drain Current-Max (Abs) (ID) :
16A
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
3V @ 250µA
Packaging :
Tape and Reel (TR)
Rds On (Max) @ Id, Vgs :
6m Ω @ 12A, 10V
JESD-609 Code :
e3
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
Number of Elements :
1
Terminal Form :
NO LEAD
Drain to Source Voltage (Vdss) :
30V
Package / Case :
8-PowerVDFN
Number of Pins :
8
Mounting Type :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Mount :
Surface Mount
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max :
0.01Ohm
Reach Compliance Code :
not_compliant
Number of Terminations :
5
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2016
Terminal Finish :
Matte Tin (Sn)
DS Breakdown Voltage-Min :
30V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Position :
Dual
JESD-30 Code :
S-PDSO-N5
Operating Mode :
ENHANCEMENT MODE
FET Type :
N-Channel
ECCN Code :
EAR99
Gate Charge (Qg) (Max) @ Vgs :
22.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1320pF @ 15V
Vgs (Max) :
±20V
Avalanche Energy Rating (Eas) :
31 mJ
Case Connection :
DRAIN
Factory Lead Time :
22 Weeks
Power Dissipation-Max :
27.8W Tc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Temperature :
-55°C~150°C TJ
Datasheets
DMT3006LFG-13
Introducing Transistors - FETs, MOSFETs - Single Diodes Incorporated DMT3006LFG-13 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-PowerVDFN, Number of Pins:8, Mounting Type:Surface Mount, Number of Terminations:5, Operating Temperature:-55°C~150°C TJ, DMT3006LFG-13 pinout, DMT3006LFG-13 datasheet PDF, DMT3006LFG-13 amp .Beyond Transistors - FETs, MOSFETs - Single Diodes Incorporated DMT3006LFG-13 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DMT3006LFG-13


N-Channel Tape & Reel (TR) 6m Ω @ 12A, 10V ±20V 1320pF @ 15V 22.6nC @ 10V 30V 8-PowerVDFN

DMT3006LFG-13 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 31 mJ.A device's maximal input capacitance is 1320pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 55.6A, which represents the maximum continuous current it can conduct.In this device, the drain current is 16A, which is the maximum continuous current the device can conduct.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

DMT3006LFG-13 Features


the avalanche energy rating (Eas) is 31 mJ
a continuous drain current (ID) of 55.6A
a 30V drain to source voltage (Vdss)


DMT3006LFG-13 Applications


There are a lot of Diodes Incorporated
DMT3006LFG-13 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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