DMT3006LFG-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

DS Breakdown Voltage-Min :

30V

Series :

Automotive, AEC-Q101

Packaging :

Tape and Reel (TR)

Factory Lead Time :

22 Weeks

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

6m Ω @ 12A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

27.8W Tc

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

16A Ta 55.6A Tc

Number of Pins :

8

Drain to Source Voltage (Vdss) :

30V

Operating Mode :

ENHANCEMENT MODE

Published :

2016

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

55.6A

JESD-609 Code :

e3

Number of Terminations :

5

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

Terminal Form :

NO LEAD

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

31 mJ

Vgs (Max) :

±20V

JESD-30 Code :

S-PDSO-N5

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

16A

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

1320pF @ 15V

Transistor Element Material :

SILICON

FET Type :

N-Channel

Package / Case :

8-PowerVDFN

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain-source On Resistance-Max :

0.01Ohm

Gate Charge (Qg) (Max) @ Vgs :

22.6nC @ 10V