DMT3006LFG-13

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Mfr.Part #
DMT3006LFG-13
Manufacturer
Diodes Incorporated
Package / Case
8-PowerVDFN
Datasheet
Download
Description
MOSFET N-CH 30V PWRDI3333
Stock
43,409
In Stock :
43,409

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Elements :
1
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rds On (Max) @ Id, Vgs :
6m Ω @ 12A, 10V
Package / Case :
8-PowerVDFN
Power Dissipation-Max :
27.8W Tc
Published :
2016
Reach Compliance Code :
not_compliant
Number of Pins :
8
Operating Temperature :
-55°C~150°C TJ
Mount :
Surface Mount
JESD-30 Code :
S-PDSO-N5
Operating Mode :
ENHANCEMENT MODE
Configuration :
SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Finish :
Matte Tin (Sn)
Transistor Element Material :
SILICON
Factory Lead Time :
22 Weeks
RoHS Status :
ROHS3 Compliant
Terminal Position :
Dual
Drain-source On Resistance-Max :
0.01Ohm
Drain Current-Max (Abs) (ID) :
16A
ECCN Code :
EAR99
Case Connection :
DRAIN
Mounting Type :
Surface Mount
Current - Continuous Drain (Id) @ 25°C :
16A Ta 55.6A Tc
Number of Terminations :
5
Vgs(th) (Max) @ Id :
3V @ 250µA
Vgs (Max) :
±20V
JESD-609 Code :
e3
Gate Charge (Qg) (Max) @ Vgs :
22.6nC @ 10V
Packaging :
Tape and Reel (TR)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
SWITCHING
Input Capacitance (Ciss) (Max) @ Vds :
1320pF @ 15V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Drain to Source Voltage (Vdss) :
30V
Avalanche Energy Rating (Eas) :
31 mJ
Continuous Drain Current (ID) :
55.6A
DS Breakdown Voltage-Min :
30V
Terminal Form :
NO LEAD
Series :
Automotive, AEC-Q101
FET Type :
N-Channel
Datasheets
DMT3006LFG-13
Introducing Transistors - FETs, MOSFETs - Single Diodes Incorporated DMT3006LFG-13 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-PowerVDFN, Number of Pins:8, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:5, DMT3006LFG-13 pinout, DMT3006LFG-13 datasheet PDF, DMT3006LFG-13 amp .Beyond Transistors - FETs, MOSFETs - Single Diodes Incorporated DMT3006LFG-13 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DMT3006LFG-13


N-Channel Tape & Reel (TR) 6m Ω @ 12A, 10V ±20V 1320pF @ 15V 22.6nC @ 10V 30V 8-PowerVDFN

DMT3006LFG-13 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 31 mJ.A device's maximal input capacitance is 1320pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 55.6A, which represents the maximum continuous current it can conduct.In this device, the drain current is 16A, which is the maximum continuous current the device can conduct.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

DMT3006LFG-13 Features


the avalanche energy rating (Eas) is 31 mJ
a continuous drain current (ID) of 55.6A
a 30V drain to source voltage (Vdss)


DMT3006LFG-13 Applications


There are a lot of Diodes Incorporated
DMT3006LFG-13 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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