DMT3006LFG-13

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Mfr.Part #
DMT3006LFG-13
Manufacturer
Diodes Incorporated
Package / Case
8-PowerVDFN
Datasheet
Download
Description
MOSFET N-CH 30V PWRDI3333
Stock
43,409
In Stock :
43,409

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
22.6nC @ 10V
Series :
Automotive, AEC-Q101
Transistor Application :
SWITCHING
Number of Terminations :
5
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Number of Pins :
8
Mount :
Surface Mount
Package / Case :
8-PowerVDFN
Terminal Form :
NO LEAD
Published :
2016
Factory Lead Time :
22 Weeks
Rds On (Max) @ Id, Vgs :
6m Ω @ 12A, 10V
Packaging :
Tape and Reel (TR)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Case Connection :
DRAIN
Operating Mode :
ENHANCEMENT MODE
Avalanche Energy Rating (Eas) :
31 mJ
Terminal Position :
Dual
Power Dissipation-Max :
27.8W Tc
ECCN Code :
EAR99
FET Type :
N-Channel
JESD-609 Code :
e3
Vgs (Max) :
±20V
Drain to Source Voltage (Vdss) :
30V
JESD-30 Code :
S-PDSO-N5
RoHS Status :
ROHS3 Compliant
Reach Compliance Code :
not_compliant
Terminal Finish :
Matte Tin (Sn)
Mounting Type :
Surface Mount
Configuration :
SINGLE WITH BUILT-IN DIODE
Input Capacitance (Ciss) (Max) @ Vds :
1320pF @ 15V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Continuous Drain Current (ID) :
55.6A
Current - Continuous Drain (Id) @ 25°C :
16A Ta 55.6A Tc
Vgs(th) (Max) @ Id :
3V @ 250µA
Drain Current-Max (Abs) (ID) :
16A
Operating Temperature :
-55°C~150°C TJ
DS Breakdown Voltage-Min :
30V
Drain-source On Resistance-Max :
0.01Ohm
Number of Elements :
1
Transistor Element Material :
SILICON
Datasheets
DMT3006LFG-13
Introducing Transistors - FETs, MOSFETs - Single Diodes Incorporated DMT3006LFG-13 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:5, Number of Pins:8, Package / Case:8-PowerVDFN, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, DMT3006LFG-13 pinout, DMT3006LFG-13 datasheet PDF, DMT3006LFG-13 amp .Beyond Transistors - FETs, MOSFETs - Single Diodes Incorporated DMT3006LFG-13 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DMT3006LFG-13


N-Channel Tape & Reel (TR) 6m Ω @ 12A, 10V ±20V 1320pF @ 15V 22.6nC @ 10V 30V 8-PowerVDFN

DMT3006LFG-13 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 31 mJ.A device's maximal input capacitance is 1320pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 55.6A, which represents the maximum continuous current it can conduct.In this device, the drain current is 16A, which is the maximum continuous current the device can conduct.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

DMT3006LFG-13 Features


the avalanche energy rating (Eas) is 31 mJ
a continuous drain current (ID) of 55.6A
a 30V drain to source voltage (Vdss)


DMT3006LFG-13 Applications


There are a lot of Diodes Incorporated
DMT3006LFG-13 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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