DMP58D0SV-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

6

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Width :

1.2mm

Max Power Dissipation :

400mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2009

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

160mA

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Logic Level Gate

Radiation Hardening :

No

Length :

1.6mm

Additional Feature :

High Reliability

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

2

Element Configuration :

Dual

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

50V

DS Breakdown Voltage-Min :

50V

Input Capacitance (Ciss) (Max) @ Vds :

27pF @ 25V

Factory Lead Time :

19 Weeks

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Number of Pins :

6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Flat

Rds On (Max) @ Id, Vgs :

8 Ω @ 100mA, 5V

Height :

600μm

Mount :

Surface Mount

JESD-609 Code :

e3

ECCN Code :

EAR99

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-563, SOT-666

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Power Dissipation :

400mW

FET Type :

2 P-Channel (Dual)

Weight :

3.005049mg

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

6

Pbfree Code :

yes

Mounting Type :

Surface Mount

Resistance :

8Ohm