DMP56D0UV-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

6.63ns

Number of Elements :

2

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

400mW

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Radiation Hardening :

No

Factory Lead Time :

16 Weeks

Turn-Off Delay Time :

21.9 ns

Turn On Delay Time :

4.46 ns

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Weight :

3.005049mg

Drain to Source Voltage (Vdss) :

50V

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

15 ns

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

50.54pF @ 25V

Max Power Dissipation :

400mW

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

-50V

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

0.58nC @ 4V

Continuous Drain Current (ID) :

160mA

Reference Standard :

AEC-Q101

Package / Case :

SOT-563, SOT-666

Terminal Form :

Flat

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

6 Ω @ 100mA, 4V

Height :

600μm

JESD-609 Code :

e3

Published :

2013

Transistor Element Material :

SILICON

Additional Feature :

High Reliability

Number of Pins :

6

Gate to Source Voltage (Vgs) :

8V

Time@Peak Reflow Temperature-Max (s) :

30

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

Matte Tin (Sn)

Width :

1.25mm

FET Feature :

Logic Level Gate

Operating Mode :

ENHANCEMENT MODE

Length :

1.7mm

Mount :

Surface Mount

Element Configuration :

Dual

Drain-source On Resistance-Max :

6Ohm

Number of Terminations :

6

FET Type :

2 P-Channel (Dual)