DMP56D0UV-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mount :

Surface Mount

Transistor Element Material :

SILICON

Power Dissipation :

400mW

Mounting Type :

Surface Mount

Factory Lead Time :

16 Weeks

Additional Feature :

High Reliability

Max Power Dissipation :

400mW

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

160mA

Number of Elements :

2

Length :

1.7mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2013

Element Configuration :

Dual

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

15 ns

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

4.46 ns

FET Feature :

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds :

50.54pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

30

Width :

1.25mm

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

6Ohm

REACH SVHC :

No SVHC

Rise Time :

6.63ns

Gate to Source Voltage (Vgs) :

8V

Reference Standard :

AEC-Q101

Lead Free :

Lead Free

JESD-609 Code :

e3

Number of Pins :

6

Height :

600μm

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Weight :

3.005049mg

Turn-Off Delay Time :

21.9 ns

Number of Terminations :

6

FET Type :

2 P-Channel (Dual)

Rds On (Max) @ Id, Vgs :

6 Ω @ 100mA, 4V

Drain to Source Voltage (Vdss) :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Flat

Gate Charge (Qg) (Max) @ Vgs :

0.58nC @ 4V

Drain to Source Breakdown Voltage :

-50V

Terminal Finish :

Matte Tin (Sn)

Radiation Hardening :

No

Package / Case :

SOT-563, SOT-666