DMP56D0UV-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

6Ohm

Number of Elements :

2

FET Type :

2 P-Channel (Dual)

Weight :

3.005049mg

Drain to Source Breakdown Voltage :

-50V

FET Feature :

Logic Level Gate

Turn-Off Delay Time :

21.9 ns

Length :

1.7mm

Input Capacitance (Ciss) (Max) @ Vds :

50.54pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

6 Ω @ 100mA, 4V

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Terminal Form :

Flat

Number of Pins :

6

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

8V

JESD-609 Code :

e3

Package / Case :

SOT-563, SOT-666

Turn On Delay Time :

4.46 ns

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

0.58nC @ 4V

Factory Lead Time :

16 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

6

Reference Standard :

AEC-Q101

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1.2V @ 250µA

ECCN Code :

EAR99

Continuous Drain Current (ID) :

160mA

Max Power Dissipation :

400mW

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Fall Time (Typ) :

15 ns

Published :

2013

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Element Configuration :

Dual

Rise Time :

6.63ns

Terminal Finish :

Matte Tin (Sn)

Height :

600μm

Width :

1.25mm

Additional Feature :

High Reliability

Power Dissipation :

400mW

Drain to Source Voltage (Vdss) :

50V