DMP58D0LFB-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

310mA

Power Dissipation-Max :

470mW Ta

Vgs (Max) :

±20V

Power Dissipation :

1.22W

Turn On Delay Time :

30.7 ns

Pin Count :

3

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

3-UFDFN

Radiation Hardening :

No

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

27pF @ 25V

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Factory Lead Time :

19 Weeks

Transistor Element Material :

SILICON

Fall Time (Typ) :

32.2 ns

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

BOTTOM

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Additional Feature :

High Reliability

Rds On (Max) @ Id, Vgs :

8 Ω @ 100mA, 5V

Published :

2015

Mounting Type :

Surface Mount

JESD-609 Code :

e4

Drain to Source Voltage (Vdss) :

50V

Case Connection :

DRAIN

Number of Elements :

1

Transistor Application :

SWITCHING

Number of Pins :

3

Number of Channels :

1

Drain-source On Resistance-Max :

8Ohm

Drain to Source Breakdown Voltage :

-50V

Current - Continuous Drain (Id) @ 25°C :

180mA Ta

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 5V

Rise Time :

84.1ns

Turn-Off Delay Time :

201.8 ns

Number of Terminations :

3

FET Type :

P-Channel

Gate to Source Voltage (Vgs) :

20V