DMP2200UDW-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

450mW

Rds On (Max) @ Id, Vgs :

260m Ω @ 880mA, 4.5V

Factory Lead Time :

15 Weeks

Gate to Source Voltage (Vgs) :

8V

FET Feature :

Standard

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Drain Current-Max (Abs) (ID) :

0.9A

Drain to Source Voltage (Vdss) :

20V

Number of Elements :

2

Published :

2015

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

Turn On Delay Time :

9.8 ns

RoHS Status :

ROHS3 Compliant

Package / Case :

6-TSSOP, SC-88, SOT-363

Input Capacitance (Ciss) (Max) @ Vds :

184pF @ 10V

DS Breakdown Voltage-Min :

20V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

2.1nC @ 4.5V

Continuous Drain Current (ID) :

900mA

Turn-Off Delay Time :

24.4 ns

Terminal Form :

Gull wing

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Contact Plating :

Tin

Number of Terminations :

6

Mount :

Surface Mount

FET Type :

2 P-Channel (Dual)

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Rise Time :

88ns

Transistor Element Material :

SILICON

Fall Time (Typ) :

45 ns

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

6