DMP2035UTS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.045Ohm

Vgs(th) (Max) @ Id :

1V @ 250μA

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

FET Type :

2 P-Channel (Dual) Common Drain

Radiation Hardening :

No

Factory Lead Time :

15 Weeks

Rise Time :

12.4ns

Number of Pins :

8

Transistor Application :

SWITCHING

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Turn-Off Delay Time :

94.1 ns

Number of Elements :

2

Max Power Dissipation :

890mW

Drain to Source Voltage (Vdss) :

20V

Gate Charge (Qg) (Max) @ Vgs :

15.4nC @ 4.5V

Weight :

157.991892mg

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

8V

Pbfree Code :

yes

Fall Time (Typ) :

42.4 ns

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

890mW

Number of Terminations :

8

Continuous Drain Current (ID) :

6.04A

Pin Count :

8

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

High Reliability

Transistor Element Material :

SILICON

Base Part Number :

DMP2035UTS

ECCN Code :

EAR99

Terminal Form :

Gull wing

FET Feature :

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds :

1610pF @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn On Delay Time :

16.8 ns

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Published :

2010

Rds On (Max) @ Id, Vgs :

35m Ω @ 4A, 4.5V

Drain to Source Breakdown Voltage :

-20V